8 research outputs found
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
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A physics based, analytical model for the threshold voltage in MOSFET's using a unified approach to account for short- and narrow-channel effects
No full textA fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs
No full textA new physics based, predictive compact model for small-geometry MOSFET's including two-dimensional calculations with a close link to process and layout data
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