3 research outputs found

    A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport

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    We have extended our supercomputer-enabled Monte Carlo simulations of hopping transport in completely disordered 2D conductors to the case of substantial electron-electron Coulomb interaction. Such interaction may not only suppress the average value of hopping current, but also affect its fluctuations rather substantially. In particular, the spectral density SI(f)S_I (f) of current fluctuations exhibits, at sufficiently low frequencies, a 1/f1/f-like increase which approximately follows the Hooge scaling, even at vanishing temperature. At higher ff, there is a crossover to a broad range of frequencies in which SI(f)S_I (f) is nearly constant, hence allowing characterization of the current noise by the effective Fano factor F\equiv S_I(f)/2e \left. For sufficiently large conductor samples and low temperatures, the Fano factor is suppressed below the Schottky value (F=1), scaling with the length LL of the conductor as F=(Lc/L)αF = (L_c / L)^{\alpha}. The exponent α\alpha is significantly affected by the Coulomb interaction effects, changing from α=0.76±0.08\alpha = 0.76 \pm 0.08 when such effects are negligible to virtually unity when they are substantial. The scaling parameter LcL_c, interpreted as the average percolation cluster length along the electric field direction, scales as LcE(0.98±0.08)L_c \propto E^{-(0.98 \pm 0.08)} when Coulomb interaction effects are negligible and LcE(1.26±0.15)L_c \propto E^{-(1.26 \pm 0.15)} when such effects are substantial, in good agreement with estimates based on the theory of directed percolation.Comment: 19 pages, 7 figures. Fixed minor typos and updated reference

    A Numerical Study of Transport and Shot Noise at 2D Hopping

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    We have used modern supercomputer facilities to carry out extensive Monte Carlo simulations of 2D hopping (at negligible Coulomb interaction) in conductors with the completely random distribution of localized sites in both space and energy, within a broad range of the applied electric field EE and temperature TT, both within and beyond the variable-range hopping region. The calculated properties include not only dc current and statistics of localized site occupation and hop lengths, but also the current fluctuation spectrum. Within the calculation accuracy, the model does not exhibit 1/f1/f noise, so that the low-frequency noise at low temperatures may be characterized by the Fano factor FF. For sufficiently large samples, FF scales with conductor length LL as (Lc/L)α(L_c/L)^{\alpha}, where α=0.76±0.08<1\alpha=0.76\pm 0.08 < 1, and parameter LcL_c is interpreted as the average percolation cluster length. At relatively low EE, the electric field dependence of parameter LcL_c is compatible with the law LcE0.911L_c\propto E^{-0.911} which follows from directed percolation theory arguments.Comment: 17 pages, 8 figures; Fixed minor typos and updated reference

    Sub-electron Charge Relaxation via 2D Hopping Conductors

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    We have extended Monte Carlo simulations of hopping transport in completely disordered 2D conductors to the process of external charge relaxation. In this situation, a conductor of area L×WL \times W shunts an external capacitor CC with initial charge QiQ_i. At low temperatures, the charge relaxation process stops at some "residual" charge value corresponding to the effective threshold of the Coulomb blockade of hopping. We have calculated the r.m.s.. value QRQ_R of the residual charge for a statistical ensemble of capacitor-shunting conductors with random distribution of localized sites in space and energy and random QiQ_i, as a function of macroscopic parameters of the system. Rather unexpectedly, QRQ_{R} has turned out to depend only on some parameter combination: X0LWν0e2/CX_0 \equiv L W \nu_0 e^2/C for negligible Coulomb interaction and XχLWκ2/C2X_{\chi} \equiv LW \kappa^2/C^{2} for substantial interaction. (Here ν0\nu_0 is the seed density of localized states, while κ\kappa is the dielectric constant.) For sufficiently large conductors, both functions QR/e=F(X)Q_{R}/e =F(X) follow the power law F(X)=DXβF(X)=DX^{-\beta}, but with different exponents: β=0.41±0.01\beta = 0.41 \pm 0.01 for negligible and β=0.28±0.01\beta = 0.28 \pm 0.01 for significant Coulomb interaction. We have been able to derive this law analytically for the former (most practical) case, and also explain the scaling (but not the exact value of the exponent) for the latter case. In conclusion, we discuss possible applications of the sub-electron charge transfer for "grounding" random background charge in single-electron devices.Comment: 12 pages, 5 figures. In addition to fixing minor typos and updating references, the discussion has been changed and expande
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