Ionic and Electronic Conductivity of Nanostructured, Samaria-Doped Ceria

The ionic and electronic conductivities of samaria doped ceria electrolytes, Ce_(0.85)Sm_(0.15)O_(1.925−δ), with nanometric grain size have been evaluated. Nanostructured bulk specimens were obtained using a combination of high specific-surface-area starting materials and suitable sintering profiles under conventional, pressureless conditions. Bulk specimens with relatively high density (≥92% of theoretical density) and low medium grain size (as small as 33 nm) were achieved. Electrical A.C. impedance spectra were recorded over wide temperature (150 to 650°C) and oxygen partial pressure ranges (0.21 to 10^(−31) atm). Under all measurement conditions the total conductivity decreased monotonically with decreasing grain size. In both the electrolytic and mixed conducting regimes this behavior is attributed to the high number density of high resistance grain boundaries. The results suggest a possible variation in effective grain boundary width with grain size, as well as a possible variation in specific grain boundary resistance with decreasing oxygen partial pressure. No evidence appears for either enhanced reducibility or enhanced electronic conductivity upon nanostructuring

Transport in Graphene Tunnel Junctions

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the electrostatic gating of graphene by the tunnel probe. We present numerical simulations of our conductance maps, confirming the measurement results. In addition, Al causes strong n-doping of graphene, Cu causes a moderate p-doping, and in high resistance junctions, phonon resonances are observed, as in STM studies.Comment: 22 pages, 5 figure

Symmetry breaking: A tool to unveil the topology of chaotic scattering with three degrees of freedom

We shall use symmetry breaking as a tool to attack the problem of identifying the topology of chaotic scatteruing with more then two degrees of freedom. specifically we discuss the structure of the homoclinic/heteroclinic tangle and the connection between the chaotic invariant set, the scattering functions and the singularities in the cross section for a class of scattering systems with one open and two closed degrees of freedom.Comment: 13 pages and 8 figure

Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films

High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001].Comment: 14 pages, 4 figure

Spectroscopic Evidence for Anisotropic S-Wave Pairing Symmetry in MgB2

Scanning tunneling spectroscopy of superconducting MgB$_2$ ($T_c = 39$ K) were studied on high-density pellets and c-axis oriented films. The sample surfaces were chemically etched to remove surface carbonates and hydroxides, and the data were compared with calculated spectra for all symmetry-allowed pairing channels. The pairing potential ($\Delta_k$) is best described by an anisotropic s-wave pairing model, with $\Delta_k = \Delta_{xy} \sin ^2 \theta_k + \Delta_z \cos ^2 \theta_k$, where $\theta_k$ is the angle relative to the crystalline c-axis, $\Delta_z \sim 8.0$ meV, and $\Delta_{xy} \sim 5.0$ meV.Comment: 4 pages and 3 figures. Submitted to Physical Review Letters. Corresponding author: Nai-Chang Yeh (e-mail: [email protected]

The intrinsic strangeness and charm of the nucleon using improved staggered fermions

We calculate the intrinsic strangeness of the nucleon, - , using the MILC library of improved staggered gauge configurations using the Asqtad and HISQ actions. Additionally, we present a preliminary calculation of the intrinsic charm of the nucleon using the HISQ action with dynamical charm. The calculation is done with a method which incorporates features of both commonly-used methods, the direct evaluation of the three-point function and the application of the Feynman- Hellman theorem. We present an improvement on this method that further reduces the statistical error, and check the result from this hybrid method against the other two methods and find that they are consistent. The values for and found here, together with perturbative results for heavy quarks, show that dark matter scattering through Higgs-like exchange receives roughly equal contributions from all heavy quark flavors.Comment: 17 pages, 14 figure