Tamm plasmon Photonic Crystals : from Bandgap Engineering to Defect Cavity

We report for the first time the bandgap engineering of Tamm plasmon photonic crystals - Tamm plasmon structures of which the metalic layer is periodically patterned into lattice of subwavelength period. By adopting a double period design, we evidenced experimentally a complete photonic bandgap up to $150\,nm$ in the telecom range. Moreover, such design offers a great flexibility to tailor on-demand, and independently, the band-gap size from $30\,nm$ to $150\,nm$ and its spectral position within $50\,nm$. Finally, by implementing a defect cavity within the Tamm plasmon photonic crystal, an ultimate cavity of $1.6\mu m$ supporting a single highly confined Tamm mode is experimentally demonstrated. All experimental results are in perfect agreement with numerical calculations. Our results suggests the possibility to engineer novel band dispersion with surface modes of hybrid metalic/dielectric structures, thus open the way to Tamm plasmon towards applications in topological photonics, metamaterials and parity symmetry physics

New concepts of integrated photonic biosensors based on porous silicon

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Improvement of electronic lithography process using proximity effect correction

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Tailoring Bloch modes in Tamm plasmons structures (Conference Presentation)

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Formation of 300 nm period pore arrays by laser interference lithography and electrochemical etching

International audienceThis paper highlights that combining laser interference lithography and electrochemical etching is a cost-effective, efficient method to realize periodic nanopore arrays in silicon with lattice pitch as small as 300 nm on centimeter-scale substrates. The fabrication of wide-area and high aspect ratio 2D pore arrays with 250 nm diameter and 5 mu m depth is demonstrated. All the steps of the process have been optimized to achieve vertical sidewalls with 50 nm thickness, providing pore arrays with aspect ratio of 100 on n-type silicon substrates over an area of 2 x 2 cm(2). These results constitute a technological advance in the realization of ordered pore arrays in silicon with very small lattice parameters, with impact in biotechnology, energy harvesting, or sensors. (C) 2015 AIP Publishing LLC

Ultimate Phase Sensitivity in Surface Plasmon Resonance Sensors by Tuning Critical Coupling with Phase Change Materials

10 pages, 7 figuresPlasmonic sensing is an established technology for real-time biomedical diagnostics and air-quality monitoring. While intensity and wavelength tracking are the most commonly used interrogation methods for Surface Plasmon Resonance (SPR), several works indicate the potential superiority of phase interrogation in detection sensitivity. Here, we theoretically and numerically establish the link between ultra-high sensitivities in phase interrogation SPR sensors and the critical coupling condition. However, reaching this condition requires a technically infeasible angstrom-level precision in the metal layer thickness. We propose a robust solution to overcome this limitation by coupling the SPR with a phase-change material (PCM) thin film. By exploiting the multilevel reconfigurable phase states of PCM, we theoretically demonstrate ultra-high phase sensitivities with a limit of detection as low as $10^{-10}$ refractive index unit (RIU). Such a PCM-assisted SPR sensor platform paves the way for unprecedented sensitivity sensors for the detection of trace amounts of low molecular weight species in biomedical sensing and environmental monitoring

Polymer-based photonic crystal VOC sensors fabricated by PMMA hot embossing

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