Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics

Semiconductors between spin-polarized source and drain

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin transistor. In this tutorial article, we discuss the general problem of spin transport in a nonmagnetic channel between source and drain. Two problems must be mastered: i) In the diffusive regime, the injection of a spin polarized current from a magnetic metal beyond the ballistic transport zone requires the insertion of a spin dependent and large enough interface resistance. ii) In both the diffusive and ballistic regimes, and whatever the metallic or semiconducting character of the source/drain, a small enough interface resistance is the condition to keep the dwell time shorter than the spin lifetime and thus to conserve the spin accumulation-induced output signal at an optimum level. Practically, the main difficulties come from the second condition. In our presentation of experimental results, we show why the transformation of spin information into a large electrical signal has been more easily achieved with carbon nanotubes than with semiconductors and we discuss how the situation could be improved in the later case

Electrical detection of spin accumulation in a p-type GaAs quantum well

We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how the current, tunneling to a second $GaMnAs$ ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for the non-relaxed spin splitting of the chemical potential, that is spin accumulation, in the $GaAs$ well. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.Comment: 4 pages - 2 figues; one added note; some numbers corrected on page

Suppression of the critical thickness threshold for conductivity at the LaAlO3/SrTiO3 interface

Perovskite materials engineered in epitaxial heterostructures have been intensely investigated during the last decade. The interface formed by an LaAlO3 thin film grown on top of a TiO2-terminated SrTiO3 substrate hosts a two-dimensional electronic system and has become the prototypical example of this field. Although controversy exists regarding some of its physical properties and their precise origin, it is universally found that conductivity only appears beyond an LaAlO3 thickness threshold of four unit cells. Here, we experimentally demonstrate that this critical thickness can be reduced to just one unit cell when a metallic film of cobalt is deposited on top of LaAlO3. First-principles calculations indicate that Co modifies the electrostatic boundary conditions and induces a charge transfer towards the Ti 3d bands, supporting the electrostatic origin of the electronic system at the LaAlO3/SrTiO3 interface. Our results expand the interest of this low-dimensional oxide system from in-plane to perpendicular transport and to the exploration of elastic and inelastic tunnel-type transport of (spin-polarized) carriers

Thermal and Optical Characterization of Undoped and Neodymium-Doped Y3ScAl4O12 Ceramics

Y3–3xNd3xSc1Al4O12 (x = 0, 0.01, and 0.02) ceramics were fabricated by sintering at high temperature under vacuum. Unit cell parameter refinement and chemical analysis have been performed. The morphological characterization shows micrograins with no visible defects. The thermal analysis of these ceramics is presented, by measuring the specific heat in the temperature range from 300 to 500 K. Their values at room temperature are in the range 0.81–0.90 J g1–K–1. The thermal conductivity has been determined by two methods: by the experimental measurement of the thermal diffusivity by the photopyroelectric method, and by spectroscopy, evaluating the thermal load. The thermal conductivities are in the range 9.7–6.5 W K–1 m–1 in the temperature interval from 300 to 500 K. The thermooptic coefficients were measured at 632 nm by the dark mode method using a prism coupler, and the obtained values are in the range 12.8–13.3 × 10–6 K–1. The nonlinear refractive index values at 795 nm have been evaluated to calibrate the nonlinear optical response of these materials.This work is supported by the Spanish Government under projects MAT2011-29255-C02-01-02, MAT2013-47395-C4-4-R, and the Catalan Government under project 2014SGR1358. It was also funded by the European Commission under the Seventh Framework Programme, project Cleanspace, FP7-SPACE-2010-1-GA No. 263044

Spintronic with semiconductors

International audienceSoon afterwards the discovery of the giant magnetoresistance in metallic multilayers, researchers have attempted to integrate spintronic properties with semiconductor materials. They came up against several difficulties related to the structural and electronic properties of the ferromagnetic metal-semiconductor interface. We will report on the recent progress made in this field of spintronic with semiconductors. First of all we will explain the interfacial resistance conditions required to inject and detect efficient spin current in a semiconductor and in a second part we will show that efficient spin injection experiments have been now achieved thanks to the addition of a tunnel resistance at the interface. We will then report on the magnetoresistance experiment performed with diluted magnetic semiconductors as ferromagnetic material. This type of material can constitute an alternative road to achieving electrical control spintronic devices. Finally, we will finish by reporting on research for a highly spin-polarized source to inject spin-polarized current in a semiconductor. It will be mainly focused on tunnel magnetoresistance junctions with semiconductor barriers and hot electron transistor. To cite this article: J.-M. George et al., C R. Physique 6 (2005). (c) 2005 Academie des sciences. Published by Elsevier SAS. All rights reserved

Suppression of the critical thickness threshold for conductivity at the LaAlO3/SrTiO3 interface

Perovskite materials engineered in epitaxial heterostructures have been intensely investigated during the last decade. The interface formed by an LaAlO3 thin film grown on top of a TiO2-terminated SrTiO3 substrate hosts a two-dimensional electronic system and has become the prototypical example of this field. Although controversy exists regarding some of its physical properties and their precise origin, it is universally found that conductivity only appears beyond an LaAlO3 thickness threshold of four unit cells. Here, we experimentally demonstrate that this critical thickness can be reduced to just one unit cell when a metallic film of cobalt is deposited on top of LaAlO3. First-principles calculations indicate that Co modifies the electrostatic boundary conditions and induces a charge transfer towards the Ti 3d bands, supporting the electrostatic origin of the electronic system at the LaAlO3/SrTiO3 interface. Our results expand the interest of this low-dimensional oxide system from in-plane to perpendicular transport and to the exploration of elastic and inelastic tunnel-type transport of (spin-polarized) carriers