The effect of alkali niobate addition on the phase stability and dielectric properties of Pb (Zn13 Nb23) O3 based ceramic

While Pb (Zn13 Nb23) O3 -PbTi O3 (PZN-PT) single crystals have shown superior ferroelectric properties, less scientific and technical interests have been placed on PZN-PT polycrystalline ceramics due to their poor thermodynamic stability and the difficult processing conditions. Here, we stabilized the PZN-PT based ceramics by adding alkali niobates such as NaNb O3 (NN) and KNb O3 (KN) and investigated their structure and dielectric properties. Two stabilization mechanisms are suggested in alkali niobate added PZN-PT ceramics, increased tolerance factor and enhanced electronegativity difference. KN stabilized the perovskite structure of PZN-PT based ceramics more effectively than NN. Both PZN-PT-KN and PZN-PT-NN ceramics showed the typical behavior of relaxor ferroelectrics. The temperature of maximum dielectric constant of PZN-PT-NN was slightly higher than that of the PZN-PT-KN, which was explained by the difference in ionic size and B -site ordering. © 2007 American Institute of Physics

Methods for determining the optimal arrangement of water deluge systems on offshore installations

Offshore installations are prone to fire and/or explosion accidents. Fires have particularly serious consequences due to their high temperatures and heat flux, which affect humans, structures and environments alike. Due to the hydrocarbon explosions caused by delayed ignition following gas dispersion, fires can be the result of immediate ignition after gas release. Accordingly, it can be difficult to decrease their frequency, which is an element of risk (risk=frequency×consequence), using an active protection system (APS) such as gas detectors capable of shutting down the operation. Thus, it is more efficient to reduce the consequence using a passive protection system (PSS) such as water spray. It is important to decide the number and location of water deluge systems, thus the aim of this study is to introduce a new procedure for optimising the locations of water deluge systems using the water deluge location index (WLI) proposed herein. The locations of water deluge systems are thus optimised based on the results of credible fire scenarios using a three-dimensional computational fluid dynamics (CFD) tool. The effects of water spray and the effectiveness of the WLI are investigated in comparison with uniformly distributed sprays

Thermoelectric properties of Al-doped mesoporous ZnO thin films

Al-doped mesoporous ZnO thin films were synthesized by a sol-gel process and an evaporation-induced self-assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al-doped mesoporous ZnO thin films increased slightly with increasing Al doping concentration. Finally, as electrical conductivity was increased as electrons were freed and pore structure was maintained by inhibiting grain growth, the thermoelectric property was enhanced with increasing Al concentration. © 2013 Min-Hee Hong et al

Structure and dielectric properties of cubic Bi<inf>2</inf>(Zn <inf>1/3</inf>Ta<inf>2/3</inf>)<inf>2</inf> O<inf>7</inf> thin films

Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition. © 2009 American Institute of Physics

Physical origin of residual thermal stresses in a multilayer ceramic capacitor

The physical origin of the residual stresses developed in the ceramic layer of the active region in a multilayer ceramic capacitor was numerically investigated. The compressive in-plane stress components σ11 and σ22 originate without regard to the presence of the margins but rather from the difference in in-plane thermal shrinkage between ceramic and metal electrode. The out-of-plane stress component σ33 physically originates mainly through the presence of the housing margin; the presence of the lateral margin is a minor source: the more ceramic-rich margins hinder the apparent vertical shrinkage of the active region to yield tensile σ33. © 2007 American Institute of Physics

Nonlinear oscillations of a sessile drop on a hydrophobic surface induced by ac electrowetting

We examine the nature of ac electrowetting (EW)-driven axisymmetric oscillations of a sessile water drop on a dielectric substrate. In ac EW, small-amplitude oscillations of a drop differ from the Rayleigh linear modes of freely oscillating drops. In this paper, we demonstrate that changes in the time-averaged contact angle of the sessile drop attributed to the presence of an electric field and a solid substrate mainly caused this discrepancy. We combine the domain perturbation method with the Lindsted-Poincare method to derive an asymptotic formula for resonant frequency. Theoretical analysis shows that the resonant frequency is a function of the time-averaged contact angle. Each mode of the resonance frequency is a linear function of epsilon(1), which is the magnitude of the cosine of the time-averaged contact angle. The most dominant mode in this study, that is, the fundamental mode n = 2, decreases linearly with epsilon(1). The results of the theoretical model are compared with those of both the experiments and numerical simulations. The average resonant frequency deviation between the perturbation solutions and numerical simulations is 4.3%, whereas that between the perturbation solutions and the experiments is 1.8%.ope

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films. © 2008 American Institute of Physics

Effect of surfactant concentration variation on the thermoelectric properties of mesoporous ZnO

The electrical and thermal conductivities and the Seebeck coefficient of mesoporous ZnO thin films were investigated to determine the change of their thermoelectric properties by controlling surfactant concentration in the mesoporous ZnO films, because the thermoelectric properties of mesoporous ZnO films can be influenced by the porosity of the mesoporous structures, which is primarily determined by surfactant concentration in the films. Mesoporous ZnO thin films were successfully synthesized by using sol-gel and evaporation-induced self-assembly processes. Zinc acetate dihydrate and Brij-76 were used as the starting material and pore structure-forming template, respectively. The porosity of mesoporous ZnO thin films increased from 29% to 40% with increasing surfactant molar ratio. Porosity can be easily altered by controlling the molar ratio of surfactant/precursor. The electrical and thermal conductivity and Seebeck coefficients showed a close correlation with the porosity of the films, indicating that the thermoelectric properties of thin films can be changed by altering their porosity. Mesoporous ZnO thin films with the highest porosity had the best thermoelectric properties (the lowest thermal conductivity and the highest Seebeck coefficient) of the films examined. © 2013 Min-Hee Hong et al

Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect. © 2007 American Institute of Physics

Tin doped indium oxide core-TiO <inf>2</inf> shell nanowires on stainless steel mesh for flexible photoelectrochemical cells

Photoanode architecture is built on highly conductive tin doped indium oxide (ITO) nanowires (NWs) on a flexible stainless steel mesh (SSM). ITO nanowires were coated with the atomic layer deposition grown TiO 2 layer and the photoelectrochemical performance of the stainless steel mesh based photoanode were examined as a function of wire-length and shell-thickness. The photoanode consisting of 20 m-long nanowire core and 36 nm thick shell increased the photocurrent of the testing cell by 4 times, compared to a reference cell. This enhanced photochemical activity is attributed to higher light harvesting efficiency of nanowire arrays and suppressed charge recombination of core-shell structure. © 2012 American Institute of Physics