Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates

InGaN micro-LEDs integrated onto an ultra-thin, colloidal quantum dot functionalized glass platform

We demonstrate an integrated color-converting device by transfer printing blue-emitting micro-sized InGaN LEDs onto an ultra-thin glass platform functionally enhanced with colloidal quantum dots. Color conversion and waveguiding properties of the structure are presented

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

In this work, we have compared SiNx passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiNx passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 104–105 to 107) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (Dit ) is reduced (from 4.86 to 0.90 × 1012 cm−2 eV−1), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiNx passivation after full device fabrication results in the reduction of Dit and improves the surface related current collapse

Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP-CVD) SiN x surface passivation layers on off-state drain ( I DS-off) and gate leakage currents ( I GS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported. I DS-off and I GS in 2 μm gate length devices were reduced by up to four orders of magnitude to ∼10 pA/mm using a compressively stressed bilayer SiN x passivation scheme. In addition, I on/ I off of ∼10 11 and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach

Self-generated magnetic flux in YBa2_2Cu3_3O7−x_{7-x} grain boundaries

Grain boundaries in YBa$_2$Cu$_3$O$_{7-x}$ superconducting films are considered as Josephson junctions with a critical current density $j_c(x)$ alternating along the junction. A self-generated magnetic flux is treated both analytically and numerically for an almost periodic distribution of $j_c(x)$. We obtained a magnetic flux-pattern similar to the one which was recently observed experimentally.Comment: 7 pages, 3 figure

Is manganese-doped diamond a ferromagnetic semiconductor?

We use density-functional theoretical methods to examine the recent prediction, based on a mean-field solution of the Zener model, that diamond doped by Mn (with spin S=5/2) would be a dilute magnetic semiconductor that remains ferromagnetic well above room temperature. Our findings suggest this to be unlikely, for four reasons: (1) substitutional Mn in diamond has a low-spin S=1/2 ground state; (2) the substitutional site is energetically unfavorable relative to the much larger "divacancy" site; 3) Mn in the divacancy site is an acceptor, but with only hyperdeep levels, and hence the holes are likely to remain localized; (4) the calculated Heisenberg couplings between Mn in nearby divacancy sites are two orders of magnitude smaller than for substitutional Mn in germanium.Comment: 5 pages, 5 figure

Transfer printed multi-color integrated devices for visible light communication applications

Integrated multi-color devices for visible light communication applications are fabricated by transfer printing blue-emitting GaN light emitting diodes (LEDs) onto a green-emitting LED array and a colloidal quantum dot color-converter structure

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations

Seasonality and spatial heterogeneity of the surface ocean carbonate system in the northwest European continental shelf

In 2014–5 the UK NERC sponsored an 18 month long Shelf Sea Biogeochemistry research programme which collected over 1500 nutrient and carbonate system samples across the NW European Continental shelf, one of the largest continental shelves on the planet. This involved the cooperation of 10 different Institutes and Universities, using 6 different vessels. Additional carbon dioxide (CO2) data were obtained from the underway systems on three of the research vessels. Here, we present and discuss these data across 9 ecohydrodynamic regions, adapted from those used by the EU Marine Strategy Framework Directive (MSFD). We observed strong seasonal and regional variability in carbonate chemistry around the shelf in relation to nutrient biogeochemistry. Whilst salinity increased (and alkalinity decreased) out from the near-shore coastal waters offshore throughout the year nutrient concentrations varied with season. Spatial and seasonal variations in the ratio of DIC to nitrate concentration were seen that could impact carbon cycling. A decrease in nutrient concentrations and a pronounced under-saturation of surface pCO2 was evident in the spring in most regions, especially in the Celtic Sea. This decrease was less pronounced in Liverpool Bay and to the North of Scotland, where nutrient concentrations remained measurable throughout the year. The near-shore and relatively shallow ecosystems such as the eastern English Channel and southern North Sea were associated with a thermally driven increase in pCO2 to above atmospheric levels in summer and an associated decrease in pH. Non-thermal processes (such as mixing and the remineralisation of organic material) dominated in winter in most regions but especially in the northwest of Scotland and in Liverpool Bay. The large database collected will improve understanding of carbonate chemistry over the North-Western European Shelf in relation to nutrient biogeochemistry, particularly in the context of climate change and ocean acidification

Measuring proper motions of isolated neutron stars with Chandra

The excellent spatial resolution of the Chandra observatory offers the unprecedented possibility to measure proper motions at X-ray wavelength with relatively high accuracy using as reference the background of extragalactic or remote galactic X-ray sources. We took advantage of this capability to constrain the proper motion of RX J0806.4-4123 and RX J0420.0-5022, two X-ray bright and radio quiet isolated neutron stars (INSs) discovered by ROSAT and lacking an optical counterpart. In this paper, we present results from a preliminary analysis from which we derive 2 sigma upper limits of 76 mas/yr and 138 mas/yr on the proper motions of RX J0806.4-4123 and RX J0420.0-5022 respectively. We use these values together with those of other ROSAT discovered INSs to constrain the origin, distance and evolutionary status of this particular group of objects. We find that the tangential velocities of radio quiet ROSAT neutron stars are probably consistent with those of 'normal' pulsars. Their distribution on the sky and, for those having accurate proper motion vectors, their possible birth places, all point to a local population, probably created in the part of the Gould Belt nearest to the earth.Comment: 8 pages, 3 figures, to appear in Astrophysics and Space Science, in the proceedings of "Isolated Neutron Stars: from the Interior to the Surface", edited by D. Page, R. Turolla and S. Zan