Magnetoelastic coupling in La2/3Sr1/3MnO3 thin films on SrTiO3

Clamping of epitaxial La2/3Sr1/3MnO3 (LSMO) magnetic thin films on SrTiO3 (STO) substrates is shown to promote a clear modification of their magnetic properties at the STO cubic-tetragonal transition. Two distinct mechanisms triggered by the STO transition, namely magnetic domain pattern reconstruction and creation of regions within the magnetically soft LSMO with enhanced magnetic anisotropy, are proposed to be behind the observed anomalous magnetic responses at low ac-magnetic field and at high dc-field, respectively. The persistence of these anomalies in LSMO films as thick as 220 nm shines new light into the magnetoelastic coupling mechanisms across interfaces

Structural and functional characterization of (110)-oriented epitaxial La2/3Ca1/3MnO3 electrodes and SrTiO3 tunnel barriers

La2/3Ca1/3MnO3 (LCMO) films have been deposited on (110)-oriented SrTiO3 (STO) substrates. X-ray diffraction and high-resolution electron microscopy reveal that the (110) LCMO films are epitaxial and anisotropically in-plane strained, with higher relaxation along the [1¿10] direction than along the [001] direction; x-ray absorption spectroscopy data signaled the existence of a single intermediate Mn3+/4+ 3d-state at the film surface. Their magnetic properties are compared to those of (001) LCMO films grown simultaneously on (001) STO substrates It is found that (110) LCMO films present a higher Curie temperature (TC) and a weaker decay of magnetization when approaching TC than their (001) LCMO counterparts. These improved films have been subsequently covered by nanometric STO layers. Conducting atomic-force experiments have shown that STO layers, as thin as 0.8 nm, grown on top of the (110) LCMO electrode, display good insulating properties. We will show that the electric conductance across (110) STO layers, exponentially depending on the barrier thickness, is tunnel-like. The barrier height in STO (110) is found to be similar to that of STO (001). These results show that the (110) LCMO electrodes can be better electrodes than (001) LCMO for magnetic tunnel junctions, and that (110) STO are suitable insulating barriers

Direct observation of multivalent states and charge transfer in Ce-doped yttrium iron garnet thin films

Due to their large magneto-optic responses, rare-earth-doped yttrium iron garnets, Y3Fe5O12 (YIG), are highly regarded for their potential in photonics and magnonics. Here, we consider the case of Ce-doped YIG (Ce-YIG) thin films, in which substitutional Ce3+ ions are magnetic because of their 4f1 ground state. In order to elucidate the impact of Ce substitution on the magnetization of YIG, we have carried out soft x-ray spectroscopy measurements on Ce-YIG films. In particular, we have used the element specificity of x-ray magnetic circular dichroism to extract the individual magnetization curves linked to Ce and Fe ions. Our results show that Ce doping triggers a selective charge transfer from Ce to the Fe tetrahedral sites in the YIG structure. This, in turn, causes a disruption of the electronic and magnetic properties of the parent compound, reducing the exchange coupling between the Ce and Fe magnetic moments and causing atypical magnetic behavior. Our work is relevant for understanding magnetism in rare-earth-doped YIG and, eventually, may enable a quantitative evaluation of the magneto-optical properties of rare-earth incorporation into YIG

Untangling electrostatic and strain effects on the polarization of ferroelectric superlattices

The polarization of ferroelectric superlattices is determined by both electrical boundary conditions at the ferroelectric/paraelectric interfaces and lattice strain. The combined influence of both factors offers new opportunities to tune ferroelectricity. However, the experimental investigation of their individual impact has been elusive because of their complex interplay. Here, a simple growth strategy has permitted to disentangle both contributions by an independent control of strain in symmetric superlattices. It is found that fully strained short‐period superlattices display a large polarization whereas a pronounced reduction is observed for longer multilayer periods. This observation indicates that the electrostatic boundary mainly governs the ferroelectric properties of the multilayers whereas the effects of strain are relatively minor

Disentangling Highly Asymmetric Magnetoelectric Effects in Engineered Multiferroic Heterostructures

One of the main strategies to control magnetism by voltage is the use of magnetostrictive-piezoelectric hybrid materials, such as ferromagnetic-ferroelectric heterostructures. When such heterostructures are subjected to an electric field, piezostrain-mediated effects, electronic charging, and voltage-driven oxygen migration (magnetoionics) may simultaneously occur, making the interpretation of the magnetoelectric effects not straightforward and often leading to misconceptions. Typically, the strain-mediated magnetoelectric response is symmetric with respect to the sign of the applied voltage because the induced strain (and variations in the magnetization) depends on the square of the ferroelectric polarization. Conversely, asymmetric responses can be obtained from electronic charging and voltage-driven oxygen migration. By engineering a ferromagnetic-ferroelectric hybrid consisting of a magnetically soft 50-nm thick Fe75Al25 (at. %) thin film on top of a (110)-oriented Pb(Mg1/3Nb2/3)O3-32PbTiO3 ferroelectric crystal, a highly asymmetric magnetoelectric response is obtained and the aforementioned magnetoelectric effects can be disentangled. Specifically, the large thickness of the Fe75Al25 layer allows dismissing any possible charge accumulation effect, whereas no evidence of magnetoionics is observed experimentally, as expected from the high resistance to oxidation of Fe75Al25, leaving strain as the only mechanism to modulate the asymmetric magnetoelectric response. The origin of this asymmetric strain-induced magnetoelectric effect arises from the asymmetry of the polarization reversal in the particular crystallographic orientation of the ferroelectric substrate. These results are important to optimize the performance of artificial multiferroic heterostructures

Kerr measurements on single-domain SrRuO3 thin films

We report on the magneto-optical measurements of an epitaxial SrRuO3 film grown on SrTiO3 (0 0 1), which previously was determined to be single domain orientated by x-ray diffraction and Raman spectroscopy techniques. Our experiments reveal a large Kerr rotation, which reaches a maximum value of about 0.5° at low temperature. By measuring magnetic hysteresis loops at different temperatures, we determined the temperature dependence of the Kerr rotation in the polar configuration. Values of the anisotropic magnetoresistance ~ 20% have been measured. These values are remarkably higher than those of other metallic oxides such as manganites. This striking difference can be attributed to the strong spin-orbit interaction of the Ru 4d ion in the SrRuO3 compound

Engineering two-dimensional superconductivity and Rashba spin-orbit coupling in LaAlO/SrTiO quantum wells by selective orbital occupancy

The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in narrow d -bands-has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s - and p - electrons. There is a growing consensus that emerging properties at these novel quantum wells-such as 2D superconductivity and magnetism-are intimately connected to specific orbital symmetries in the 2DEG sub-band structure. Here we show that crystal orientation allows selective orbital occupancy, disclosing unprecedented ways to tailor the 2DEG properties. By carrying out electrostatic gating experiments in LaAlO₃/SrTiO₃ wells of different crystal orientations, we show that the spatial extension and anisotropy of the 2D superconductivity and the Rashba spin-orbit field can be largely modulated by controlling the 2DEG sub-band filling. Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at LaAlO₃/SrTiO₃ interfaces. Two-dimensional electron gases at oxide interfaces induce exotic behaviours. By studying samples with different crystal orientation, Herranz et al. show that the extension and anisotropy of the oxide quantum well properties can be controlled through selective sub-band filling via orientational tuning

Llum polaritzada : de les pel·lícules 3D a les pantalles de cristall líquid

Conferència realitzada el Dissabte, 21 de Febrer de 2015La llum és una ona electromagnètica que es propaga en l'espai, és a dir, hi ha un camp magnètic i un camp elèctric acoblats que oscil·len periòdicament, les vibracions dels quals són perpendiculars entre ells i a la direcció de propagació. En principi, hi ha un nombre il·limitat de plans dins els quals les oscil·lacions dels camps magnètic i elèctric poden estar contingudes i aleshores es diu que la llum no està polaritzada. Per exemple, la llum produïda pel Sol no està polaritzada. Malgrat tot, és possible restringir el pla de les vibracions dels camps electromagnètics, de manera que les oscil·lacions només es produeixin en un sol pla, i aleshores es parla de llum polaritzada. Això es pot fer quan es fa passar la llum per materials amb propietats òptiques especials (birefringents), quan la llum és dispersada per petites molècules (com, per exemple, a l'atmosfera) o quan la llum és reflectida en superfícies. La llum polaritzada dóna molt de joc, ja que permet manipular les ones electromagnètiques. Per exemple, es pot fer servir per a veure pel·lícules 3D i també són a la base de les pantalles de cristall líquid. Per exemple, si fem servir ulleres amb filtres polaritzants podem bloquejar alternativament la llum que arriba a l'ull esquerre o al dret, la qual cosa permet processar les imatges rebudes com si fossin tridimensionals. En les pantalles de dispositius electrònics, l'orientació dels cristalls líquids permet també bloquejar o desbloquejar el pas de llum polaritzada a través dels cristalls, cosa que permet, per exemple, activar selectivament el color dels píxels en les pantalles dels ordinadors

Giant step bunching from self-organized coalescence of SrRuO3 islands

Step bunching develops in the epitaxy of SrRuO3 on vicinal SrTiO3(001) substrates. We have investigated the formation mechanisms and we show here that step bunching forms by lateral coalescence of wedgelike three-dimensional islands that are nucleated at substrate steps. After coalescence, wedgelike islands become wider and straighter with growth, forming a self-organized network of parallel step bunches with altitudes exceeding 30 unit cells, separated by atomically flat terraces. The formation mechanism of step bunching in SrRuO3, from nucleated islands, radically differs from one-dimensional models used to describe bunching in semiconducting materials. These results illustrate that growth phenomena of complex oxides can be dramatically different to those in semiconducting or metallic systems

Magnetoelastic coupling in La2/3Sr1/3MnO3 thin films on SrTiO3

Clamping of epitaxial La2/3Sr1/3MnO3 (LSMO) magnetic thin films on SrTiO3 (STO) substrates is shown to promote a clear modification of their magnetic properties at the STO cubic-tetragonal transition. Two distinct mechanisms triggered by the STO transition, namely magnetic domain pattern reconstruction and creation of regions within the magnetically soft LSMO with enhanced magnetic anisotropy, are proposed to be behind the observed anomalous magnetic responses at low ac-magnetic field and at high dc-field, respectively. The persistence of these anomalies in LSMO films as thick as 220 nm shines new light into the magnetoelastic coupling mechanisms across interfaces