Operating regime and stability of mode-locking in 10GHz quantum dot laser diodes around 1.5µm

In this paper we investigate and explore the stability and operating regime of modelocking (ML) in 4mm long Fabry-Perot type lasers, corresponding to a roundtrip frequency of 10GHz. The devices are fabricated on InAs/InP quantum dot material, operating at wavelengths around 1.5um, and are HR-coated at the absorber side. In order to find the stable ML region of operation in these devices, we have performed sweep-scans on the injection current of the gain section, and the reverse bias voltage on the absorber section. We will present the optical and electrical spectrum of devices with different absorber length. These results will be compared with the performance of earlier devices without HR coating

Passively modelocked 15, 20 and 40 Ghz bulk InGaAsP lasers

Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking in 20 GHz self colliding pulse modelocked lasers and 40 GHz colliding pulse lasers has been demonstrated and the devices have been characterized. Pulse lengths down to 1.6 ps have been observed from a linear device at 20GHz. 15GHz modelocked ring lasers have been fabricated as well. In order to avoid internal reflections in the ring, the design employs successfully adiabatic bends and a directional coupler. Measurements with a 50GHz RF analyzer showed more stable operation than the linear devices, but pulses are highly chirped. The layer stack used for these lasers is compatible with our active-passive integration scheme

Observation of Q-switching and mode-locking in two-section InAs-InP (100) quantum dot lasers at 1.53 µm

First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 µm is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip

Monolithic multiband nanosecond programmable wavelength router

A compact scalable reconfigurable multiwavelength router is proposed and demonstrated using an electronically gated cyclic router. Simultaneous wavelength-multiplexed channel allocation is performed with power penalties of 0.2-0.8 dB. Nanosecond timescale reconfiguration is achieved within a 2-ns guard band using semiconductor optical amplifier gates

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated Sagnac loop reflectors avoids using high reflection coating. Only anti-reflection coating is used in the output facet of the chip

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is increased by a factor of 103. This is, to the best of our knowledge, the first demonstration of a totally integrated label swapping device