Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal

The authors report the coupling of single InGaAs quantum dots (QDs) to the surface plasmon resonance of a metal nanocrystal. Clear enhancement of the photoluminescence (PL) in the spectral region of the surface plasmon resonance is observed which splits up into distinct emission lines from single QDs in micro-PL. The hybrid metal-semiconductor structure is grown by molecular beam epitaxy on GaAs (100) utilizing the concept of self-organized anisotropic strain engineering for realizing ordered arrays with nanometer-scale precise positioning of the metal nanocrystals with respect to the QD

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications

Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

Self-organized anisotropic strain engineering guided on shallow- and deep-patterned GaAs (311)B substrates is exploited for formation of complex laterally ordered architectures of connected InGaAs quantum dot (QD) arrays and isolated InAs QD groups by molecular beam epitaxy. The combination of strain and step engineerings on shallow stripe-patterned substrates transforms the periodic spotlike arrangement of the InGaAs QD arrays and InAs QD groups (on planar substrates) into a zigzag arrangement of periodic stripes which are well ordered over macroscopic areas on zigzag mesa-patterned substrates. In contrast, the formation of slow-growing facets on deep-patterned substrates produces QD-free mesa sidewalls, while InGaAs QD arrays and InAs QD groups form on the GaAs (311)B top and bottom planes with arrangements modified only close to the sidewalls depending on the sidewall orientation. The QDs on the shallow- and deep-patterned substrates exhibit excellent optical properties up to room temperature. Therefore, the concept of guided self-organization demonstrated on shallow-patterned (due to steps) and deep-patterned (due to facets) substrates is highlighted for creation of complex architectures of laterally ordered QDs for future quantum functional devices. © 2007 American Institute of Physic

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during growth of (In,Ga)As/GaAs superlattice (SL) structures is studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectroscopy. XRD and AFM evidence that annealing after the supply of each layer of elongated (In,Ga)As quantum dots (QDs) in the SL is the crucial process for QWR formation. We conclude that during annealing, the shape anisotropy of the QDs is enhanced due to anisotropic mass transport and the QDs become connected along the [0-11] direction. Strain reduction by In desorption, revealed by XRD and PL, which accompanies this process, then results in well defined, uniform QWR arrays by repetition in SL growt

Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-organized engineering of anisotropic strain in a (In,Ga)As/GaAs superlattice (SL). Due to the accumulation and improvement of the uniformity of the strain-field modulation along [011], formation of InAs QD arrays along [0-11] with 140 nm lateral periodicity is clearly observed on the SL template when the number of SL periods is larger than ten. By enhancing the In adatom surface migration length at low growth rates, clear arrays of single InAs QDs are obtained. The QD arrays exhibit strong photoluminescence efficiency that is not reduced compared to that from InAs QD layers on GaAs. Hence, ordering by self-organized anisotropic strain engineering maintains the high structural quality of InAs QD

Cavity-enhanced superconducting single-photon detectors on GaAs substrate

Nanowire superconducting single photon detectors (SSPDs) are unique detectors for many applications in quantum information and communications technology, owing to their ultrafast photoresponse, low dark count rate and low timing jitter. However, they have limited detection efficiency due to small optical absorption in ultrathin wires. A promising approach to increase the photon absorption in SSPDs, is integrating them with advanced optical structures. We demonstrate the successful integration of SSPDs with optical microcavities based on GaAs/AlAs Bragg mirrors. Characterization of these devices reveals clear cavity enhancement of the detection efficiency, resulting in a peak value of18% at 2=l300nm and T=4.2

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications

Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy

We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures

Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B

Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-like periodic arrangement are created by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice (SL) templates on planar GaAs (311)B substrates in molecular beam epitaxy. On shallow- and deep-patterned substrates the respectively generated steps and facets guide the self-organization process during SL template formation to create more complex ordering such as periodic stripes, depending on pattern design. Here we demonstrate for patterns such as shallow- and deepetched round holes and deep-etched zigzag mesas that the self-organized periodic arrangement of QD molecules and single QDs is spatially locked to the pattern sidewalls and corners. This extends the concept of guided self-organization to deterministic self-organization. Absolute position control of the QDs is achieved without one-to-one pattern definition. This guarantees the excellent arrangement control of the ordered QD molecules and single QDs with strong photoluminescence emission up to room temperature, which is required for future quantum functional devices. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim