Rectification behaviour of molecular layers on Si(111)

Reproducible and strong diode-like behaviour is observed for molecular films of 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) on n-type Si(111)- 7×7 surfaces studied by scanning tunnelling microscopy (STM) and spectroscopy (STS) at 77 K. The mechanism behind the rectification is likely to be related to the electron distribution at the molecule-silicon interface. We suggest that the adsorption of the molecular layer profoundly modifies the electronic structure of the Si(111)- 7×7 surface

Inelastic electron tunneling spectroscopy on decanethiol at elevated temperatures

Inelastic electron tunneling spectroscopy (IETS) measurements using scanning tunneling microscopy (STM) on a decanethiol self-assembled monolayer on Au(111) are presented. The results presented are obtained in the temperature range 77-300 K, which is a much higher temperature than what is commonly used for STM-IETS measurements. Two peaks at ±34 meV (probably Au-S or S-C stretch mode) and ±156 meV (C-C stretch mode or a CH2 mode) are resolved