21,786 research outputs found
Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition
Temperature-dependent resistivity of graphene grown by chemical vapor
deposition (CVD) is investigated. We observe in low mobility CVD graphene
device a strong insulating behavior at low temperatures and a metallic behavior
at high temperatures manifesting a non-monotonic in the temperature dependent
resistivity.This feature is strongly affected by carrier density modulation. To
understand this anomalous temperature dependence, we introduce thermal
activation of charge carriers in electron-hole puddles induced by randomly
distributed charged impurities. Observed temperature evolution of resistivity
is then understood from the competition among thermal activation of charge
carriers, temperature-dependent screening and phonon scattering effects. Our
results imply that the transport property of transferred CVD-grown graphene is
strongly influenced by the details of the environmentComment: 7 pages, 3 figure
Formulating the Net Gain of MISO-SFN in the Presence of Self-Interferences
In this study, an analytical formula for multiple-input single-output single frequency network gain (MISO-SFNG) is investigated. To formulate the net MISO-SFNG, we derived the average signal to interference plus noise ratio (SINR) where the gain achieved by the distributed MISO diversity as a function of power imbalance is curve-fitted. Further, we analyzed the losses owing to self-interferences resulting from the delay spread and imperfect channel estimation. We verified the accuracy and effectiveness of the derived formula by comparing the measurement results with the analytical results. The derived formula helps to understand how various system factors affect the gain under a given condition. The formula can be used to evaluate the MISO-SFNG and to predict the MISO-SFN coverage in various system configurations
Metallic characteristics in superlattices composed of insulators, NdMnO3/SrMnO3/LaMnO3
We report on the electronic properties of superlattices composed of three
different antiferromagnetic insulators, NdMnO3/SrMnO3/LaMnO3 grown on SrTiO3
substrates. Photoemission spectra obtained by tuning the x-ray energy at the Mn
2p -> 3d edge show a Fermi cut-off, indicating metallic behavior mainly
originating from Mn e_g electrons. Furthermore, the density of states near the
Fermi energy and the magnetization obey a similar temperature dependence,
suggesting a correlation between the spin and charge degrees of freedom at the
interfaces of these oxides
Effect of Inter-Site Repulsions on Magnetic Susceptibility of One-Dimensional Electron Systems at Quarter-Filling
The temperature dependence of the magnetic susceptibility, \chi (T), is
investigated for one-dimensional interacting electron systems at
quarter-filling within the Kadanoff-Wilson renormalization-group method.
The forward scattering on the same branch (the g_4-process) is examined
together with the backward (g_1) and forward (g_2) scattering amplitudes on
opposite branches.
In connection with lattice models, we show that \chi (T) is strongly enhanced
by the nearest-neighbor interaction, an enhancement that surpasses one of the
next-nearest-neighbor interaction.
A connection between our predictions for \chi (T) and experimental results
for \chi (T) in quasi-one-dimensional organic conductors is presented.Comment: 4 pages, 4 figures, to be published in Journal of the Physical
Society of Japan, vol. 74, No. 1
Electronic properties of correlated metals in the vicinity of a charge order transition: optical spectroscopy of -(BEDT-TTF)Hg(SCN) ( = NH, Rb, Tl)
The infrared spectra of the quasi-two-dimensional organic conductors
-(BEDT-TTF)Hg(SCN) ( = NH, Rb, Tl) were measured in
the range from 50 to 7000 \cm down to low temperatures in order to explore the
influence of electronic correlations in quarter-filled metals. The
interpretation of electronic spectra was confirmed by measurements of pressure
dependant reflectance of -(BEDT-TTF)KHg(SCN) at T=300 K. The
signatures of charge order fluctuations become more pronounced when going from
the NH salt to Rb and further to Tl compounds. On reducing the temperature,
the metallic character of the optical response in the NH and Rb salts
increases, and the effective mass diminishes. For the Tl compound, clear
signatures of charge order are found albeit the metallic properties still
dominate. From the temperature dependence of the electronic scattering rate the
crossover temperature is estimated below which the coherent charge-carriers
response sets in. The observations are in excellent agreement with recent
theoretical predictions for a quarter-filled metallic system close to charge
order
Finite-Temperature Properties across the Charge Ordering Transition -- Combined Bosonization, Renormalization Group, and Numerical Methods
We theoretically describe the charge ordering (CO) metal-insulator transition
based on a quasi-one-dimensional extended Hubbard model, and investigate the
finite temperature () properties across the transition temperature, . In order to calculate dependence of physical quantities such as the
spin susceptibility and the electrical resistivity, both above and below
, a theoretical scheme is developed which combines analytical
methods with numerical calculations. We take advantage of the renormalization
group equations derived from the effective bosonized Hamiltonian, where Lanczos
exact diagonalization data are chosen as initial parameters, while the CO order
parameter at finite- is determined by quantum Monte Carlo simulations. The
results show that the spin susceptibility does not show a steep singularity at
, and it slightly increases compared to the case without CO because
of the suppression of the spin velocity. In contrast, the resistivity exhibits
a sudden increase at , below which a characteristic dependence
is observed. We also compare our results with experiments on molecular
conductors as well as transition metal oxides showing CO.Comment: 9 pages, 8 figure
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