Atomic Scale Measurement of Polar Entropy

Entropy is a fundamental thermodynamic quantity that is a measure of the accessible microstates available to a system, with the stability of a system determined by the magnitude of the total entropy of the system. This is valid across truly mind boggling length scales - from nanoparticles to galaxies. However, quantitative measurements of entropy change using calorimetry are predominantly macroscopic, with direct atomic scale measurements being exceedingly rare. Here for the first time, we experimentally quantify the polar configurational entropy (in meV/K) using sub-\r{a}ngstr\"{o}m resolution aberration corrected scanning transmission electron microscopy. This is performed in a single crystal of the prototypical ferroelectric $\mathsf{LiNbO_3}$ through the quantification of the niobium and oxygen atom column deviations from their paraelectric positions. Significant excursions of the niobium - oxygen polar displacement away from its symmetry constrained direction is seen in single domain regions which increases in the proximity of domain walls. Combined with first principles theory plus mean field effective Hamiltonian methods, we demonstrate the variability in the polar order parameter, which is stabilized by an increase in the magnitude of the configurational entropy. This study presents a powerful tool to quantify entropy from atomic displacements and demonstrates its dominant role in local symmetry breaking at finite temperatures in classic, nominally Ising ferroelectrics.Comment: 23 pages, 21 figures (5 main, 16 supplemental

Effect of the Intrinsic Width on the Piezoelectric Force Microscopy of a Single Ferroelectric Domain Wall

Intrinsic domain wall width is a fundamental parameter that reflects bulk ferroelectric properties and governs the performance of ferroelectric memory devices. We present closed-form analytical expressions for vertical and lateral piezoelectric force microscopy (PFM) profiles for the conical and disc models of the tip, beyond point charge and sphere approximations. The analysis takes into account the finite intrinsic width of the domain wall, and dielectric anisotropy of the material. These analytical expressions provide insight into the mechanisms of PFM image formation and can be used for quantitative analysis of the PFM domain wall profiles. PFM profile of a realistic domain wall is shown to be the convolution of its intrinsic profile and resolution function of PFM.Comment: 25 pages, 5 figures, 3 tables, 3 Appendices, To be submitted to J. Appl. Phy