Development of multi-depth probing 3D microelectrode array to record electrophysiological activity within neural cultures

Microelectrode arrays (MEAs) play a crucial role in investigating the electrophysiological activities of neuronal populations. Although two-dimensional neuronal cell cultures have predominated in neurophysiology in monitoring in-vitro the electrophysiological activity, recent research shifted toward culture using three-dimensional (3D) neuronal network structures for developing more sophisticated and realistic neuronal models. Nevertheless, many challenges remain in the electrophysiological analysis of 3D neuron cultures, among them the development of robust platforms for investigating the electrophysiological signal at multiple depths of the 3D neurons’ networks. While various 3D MEAs have been developed to probe specific depths within the layered nervous system, the fabrication of microelectrodes with different heights, capable of probing neural activity from the surface as well as from the different layers within the neural construct, remains challenging. This study presents a novel 3D MEA with microelectrodes of different heights, realized through a multi-stage mold-assisted electrodeposition process. Our pioneering platform allows meticulous control over the height of individual microelectrodes as well as the array topology, paving the way for the fabrication of 3D MEAs consisting of electrodes with multiple heights that could be tailored for specific applications and experiments. The device performance was characterized by measuring electrochemical impedance, and noise, and capturing spontaneous electrophysiological activity from neurospheroids derived from human induced pluripotent stem cells. These evaluations unequivocally validated the significant potential of our innovative multi-height 3D MEA as an avant-garde platform for in vitro 3D neuronal studies

Dopant profiling on ultra shallow junctions in Si with ADF-STEM

The utmost scaling of the electronic devices nowadays attained, requires both ultra shallow junctions and high levels of dopant concentration and activation. In these conditions, the presence of surfaces or interfaces assumes a very important role in the determination of the dopant distribution during post-implantation annealing. In this work, we show how the Z-contrast annular dark field scanning transmission electron microscopy (ADF-STEM) technique, pionereed by Pennycook and coworkers [1], can be optimised to give reliable dopant profiles at a subnanometer scale thus satisfying some of the new needs of the ultra shallow implants characterization

Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F

Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130 °C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates

Infrared Diffusion-Ordered Spectroscopy Reveals Molecular Size and Structure

Inspired by ideas from NMR, we have developed Infrared Diffusion-Ordered Spectroscopy (IR-DOSY), which simultaneously characterizes molecular structure and size. We rely on the fact that the diffusion coefficient of a molecule is determined by its size through the Stokes-Einstein relation, and achieve sensitivity to the diffusion coefficient by creating a concentration gradient and tracking its equilibration in an IR-frequency resolved manner. Analogous to NMR-DOSY, a two-dimensional IR-DOSY spectrum has IR frequency along one axis and diffusion coefficient (or equivalently, size) along the other, so the chemical structure and the size of a compound are characterized simultaneously. In an IR-DOSY spectrum of a mixture, molecules with different sizes are nicely separated into distinct sets of IR peaks. Extending this idea to higher dimensions, we also perform 3D-IR-DOSY, in which we combine the conformation sensitivity of femtosecond multi-dimensional IR spectroscopy with size sensitivity

High performance n(+)/p and p(+)/n germanium diodes at low-temperature activation annealing

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Peculiarities of the hydrogenated In(AsN) alloy

The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen ε+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ∼500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys

H-tailored surface conductivity in narrow band gap In(AsN)

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

Near infra-red light detection enhancement of plasmonic photodetectors

Nowadays numerous are the applications interested in exploiting near infrared light detection like LiDAR (at 850 - 950 nm wavelengths), NIR spectroscopy, quantum computation, and the detection of light from NIR emitting scintillators. Silicon based single photon avalanche diodes (SPAD) could be a valid device achieving high detection efficiency and high timing resolution. Moreover, they can provide single photon sensitivity in large areas if arranged in extended arrays named Silicon Photomultipliers (SiPM). Nevertheless, the Photon Detection Efficiency (PDE) of standard SiPMs in the NIR range is strongly limited by the relatively low Si absorption coefficient, leading to an absorption depth much larger than the typical active thickness of Si SPAD, i.e. 18 μm at 850 nm compared to some few μm’s. Hence, the performance of Si based detectors in NIR range is still inadequate for almost all the cited applications. A potential solution to overcome the limited Si absorption coefficient is to couple these photodetectors with a structure supporting highly confined light such as plasmonic oscillations, thus increasing the absorption. In recent years, the development in nanophotonic demonstrated that the interphase between metallic nanostructured and dielectric surface can support Surface Plasmon Polaritons (SPP) i.e. electrons collective oscillation highly confined along the thickness of the device. Some of these interesting nanostructured are: i) 1- and 2-dimensional gratings; ii) bullseye structures; iii) nano-pillars and nano-holes arrays. Among those, 1D and 2D metallic nanograting are the most promising structures considering their feasibility and possible integration with Si based photodetector and SiPM technologies. In this contribution, we investigated the integration of a bidimensional metallic plasmonic nanograting structure on state of art photodetectors (PDs). For ease of production and characterization, the test devices consisted of conventional Silicon photodiodes instead of a proper SPAD. The PDs have been produced at the facility of Fondazione Bruno Kessler (Trento, Italy) using a custom CMOS-like microfabrication process similar the one used for FBK-SiPM technology. The previous described metallic nanograting is directly fabricated on a PDs by i) Electron Beam Lithography (EBL), ii) silver deposition, and iii) lift-off. Afterwards, the quantum efficiency (QE) of the produced samples have been measured in (450-1100) nm range. The first results are promising with an enhancement of about 45% at 950 nm with respect to the reference PD without any plasmonic nanostructured on top