High Peak-Power Mid-Infrared Zngep2 Optical Parametric Oscillator Pumped By A Tm:Fiber Master Oscillator Power Amplifier System

We report on the utilization of a novel Tm:fiber laser source for mid-IR ZnGeP2 (ZGP) optical parametric oscillator (OPO) pumping. The pump laser is built in a master oscillator power-amplifier configuration delivering up to 3.36 W of polarized, diffraction limited output power with 7 ns pulse duration and 4 kHz repetition rate. This corresponds to a peak power of ∼121 kW and a pulse energy of ∼0.84 mJ. With this source, we generated 27.9 kW of total mid-IR peak power in a doubly resonant oscillator (DRO) configuration. This is, to the best of our knowledge, the highest ever demonstrated mid-IR peak power from a directly Tm:fiber laser pumped ZGP OPO. Moreover, a DRO output with about 284 μJ of total mid-IR pulse energy was demonstrated using 100 ns pump pulses. The wavelength tuning of the idler was extended to 6 μm with lower output power in another OPO experiment. © 2014 Optical Society of America

Nanosecond Tm: Fiber Mopa System For High Peak Power Mid-Ir Generation In A Zgp Opo

We report on the generation of 28 kW peak power in a Mid-IR ZGP OPO, pumped by a Tm:fiber MOPA system delivering ~8 ns pulses with ~120 kW of usable pump peak power at 1980 nm. © OSA 2013

Utilizing The Transparency Of Semiconductors Via Backside Machining With A Nanosecond 2 Μm Tm:Fiber Laser

Semiconductors such as Si and GaAs are transparent to infrared laser radiation with wavelengths \u3e1.2 μm. Focusing laser light at the back surface of a semiconductor wafer enables a novel processing regime that utilizes this transparency. However, in previous experiments with ultrashort laser pulses we have found that nonlinear absorption makes it impossible to achieve sufficient optical intensity to induce material modification far below the front surface. Using a recently developed Tm:fiber laser system producing pulses as short as 7 ns with peak powers exceeding 100 kW, we have demonstrated it is possible to ablate the backside surface of 500-600 μm thick Si and GaAs wafers. We studied laser-induced morphology changes at front and back surfaces of wafers and obtained modification thresholds for multipulse irradiation and surface processing in trenches. A significantly higher back surface modification threshold in Si compared to front surface is possibly attributed to nonlinear absorption and light propagation effects. This unique processing regime has the potential to enable novel applications such as semiconductor welding for microelectronics, photovoltaic, and consumer electronics. © 2014 SPIE

Post-Processing Of 3D-Printed Parts Using Femtosecond And Picosecond Laser Radiation

Additive manufacturing, also known as 3D-printing, is a near-net shape manufacturing approach, delivering part geometry that can be considerably affected by various process conditions, heat-induced distortions, solidified melt droplets, partially fused powders, and surface modifications induced by the manufacturing tool motion and processing strategy. High-repetition rate femtosecond and picosecond laser radiation was utilized to improve surface quality of metal parts manufactured by laser additive techniques. Different laser scanning approaches were utilized to increase the ablation efficiency and to reduce the surface roughness while preserving the initial part geometry. We studied post-processing of 3D-shaped parts made of Nickel- and Titanium-base alloys by utilizing Selective Laser Melting (SLM) and Laser Metal Deposition (LMD) as additive manufacturing techniques. Process parameters such as the pulse energy, the number of layers and their spatial separation were varied. Surface processing in several layers was necessary to remove the excessive material, such as individual powder particles, and to reduce the average surface roughness from asdeposited 22-45 μm to a few microns. Due to the ultrafast laser-processing regime and the small heat-affected zone induced in materials, this novel integrated manufacturing approach can be used to post-process parts made of thermally and mechanically sensitive materials, and to attain complex designed shapes with micrometer precision. © 2014 SPIE

Trans-Wafer Processing Of Semiconductors With Nanosecond Mid-Ir Laser Radiation

In recent years, a major push was made for the use of novel laser sources in the processing of semiconductors and other materials used in photovoltaic and IC applications. In addition to a large number of highly automated laser processes already adopted by the industry, more laser-based processing approaches are being developed to improve performance and reduce manufacturing costs. Common semiconductors are transparent in the infrared spectral region. Therefore laser sources operating at mid-IR wavelengths can be successfully utilized to induce material modifications in semiconductor wafers even beyond the laser-incident surface. We present our initial studies of this processing regime utilizing a self-developed nanosecond-pulsed thulium fiber laser emitting at the wavelength 2 μm. Our experimental approach confirmed that morphology changes could be induced not only at the front (laser-incident) surface of the wafer, but also independently at the back surface. We investigated the influence of process parameters, such as the incident pulse energy, duration and focusing conditions, on the induced surface morphology. In addition, we studied experimental routes to a number of potential applications of this processing regime, such as the PV cell edge isolation and the wafer scribing

Examination Of Laser-Induced Heating On Multi-Component Chalcogenide Glass

Next-generation infrared (IR) optical components based on chalcogenide glasses (ChGs) may include structures which benefit from the enhanced optical function offered by spatially modifying regions with a nanocrystalline phase. Such modification may be envisioned if the means by which such spatial control of crystallization can be determined using the advantages offered through three-dimensional direct laser write (DLW) processes. While ChGs are well known to have good transparency in the IR, they typically possess lower thresholds for photo- and thermally- induced property changes as compared to other glasses such as silicates. Such low thresholds can result in material responses that include photoexpansion, large thermo-optic increases, mechanical property changes, photo-induced crystallization, and ablation. The present study examines changes in ChG material response realized by exposing the material to different laser irradiation conditions in order to understand the effects of these conditions on such material property changes. Thresholds for photoexpansion and ablation were studied by varying the exposure time and power with sub-bandgap illumination and evidence of laser induced phase change were examined. Simulations were carried out to estimate the temperature increase from the irradiation and the tolerances and stability of the calculations were examined. The models suggest that the processes may have components that are non-thermal in nature. © 2014 SPIE

Principles And Applications Of Trans-Wafer Processing Using A 2-Μm Thulium Fiber Laser

A self-developed nanosecond-pulsed thulium fiber laser operating at the wavelength λ = 2 μm was used to selectively modify the front and the back surfaces of various uncoated and metal-coated silicon and gallium arsenide wafers utilizing transparency of semiconductors at this wavelength. This novel processing regime was studied in terms of the process parameter variations, i.e., pulse energy and pulse duration, and the corresponding modification fluence thresholds were determined. The results revealed nearly debris-free back surface processing of wafers, in which modifications could be induced without affecting the front surfaces. The back surface modification threshold of Si was significantly higher than at the front surface due to non-linear absorption and aberration effects observed in experiments. A qualitative study of the underlying physical mechanisms responsible for material modification was performed, including basic analytical modeling and z-scan measurements. Multi-photon absorption, surface-enhanced absorption at nano- and microscopic defect sites, and damage accumulation effects are considered the main physical mechanisms accountable for consistent surface modifications. Applications of trans-wafer processing in removal of thin single- and multi-material layers from the back surface of Si wafers, both in single tracks and large areas, are presented

Highly efficient nonthermal ablation of bone under bulk water with a frequency-doubled Nd:YVO4 picosecond laser

Several laser systems in the infrared wavelength range, such as Nd:YAG, Er:YAG or CO2 lasers are used for efficient ablation of bone tissue. Here the application of short pulses in coaction with a thin water film results in reduced thermal side effects. Nonetheless up to now there is no laser-process for bone cutting in a clinical environment due to lack of ablation efficiency. Investigations of laser ablation rates of bone tissue using a rinsing system and concerning bleedings have not been reported yet. In our study we investigated the ablation rates of bovine cortical bone tissue, placed 1.5 cm deep in water under laminar flow conditions, using a short pulsed (25 ps), frequency doubled (532 nm) Nd:YVO4 laser with pulse energies of 1 mJ at 20 kHz repetition rate. The enhancement of the ablation rate due to debris removal by an additional water flow from a well-directed blast pipe as well as the negative effect of the admixture of bovine serum albumin to the water were examined. Optical Coherence Tomography (OCT) was used to measure the ablated volume. An experimental study of the depth dependence of the ablation rate confirms a simplified theoretical prediction regarding Beer-Lambert law, Fresnel reflection and a Gaussian beam profile. Conducting precise incisions with widths less than 1.5 mm the maximum ablation rate was found to be 0.2 mm3/s. At depths lower than 100 ?m, while the maximum depth was 3.5 mm