Thermoelectricity of Nanostructures Based on Compounds of Lead Telluride

The thermoelectric parameters have been investigated depending on the thickness of the layer of nanostructures PbTe doped by Bi. Based on the theoretical model of quantum well (QW) with infinitely high walls, it is demonstrated that this model explains nonmonotonous behaviour of the Seebeck coefficient S and electric conductivity σ with the change of the well width. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3487

Atomic defects and physical-chemical properties of PbTe-InTe solid solutions

Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place

Квантово-розмірні ефекти в тонких напівпровідникових плівках на основі плюмбум телуриду

Based on the model of quantum flat rectangular and with infinitely high walls pit, the correspondences were calculated and received value of the Fermi energy and kinetic coefficients (conductivity σ, Seebeck coefficient S and thermoelectric power S2σ) for n-PbTe, by the Boltzman kinetic equation. Еhe cases with strongly degenerate and degenerate electronic gas in the films of lead telluride with n-type of conductivity are considered separately. The oscillating character of dependences of thermoelectric parameters of nanostructures based on n-PbTe for the degenerate and strongly degenerate electron gas has been theoretically proved.На основі моделі квантової прямокутної ями з плоским дном та нескінченно високими стінками отримано співвідношення та розраховано значення для енергії Фермі та кінетичних коефіцієнтів (коефіцієнта Зеєбека S та термоелектричної потужності S2σ) для n-PbTe, використовуючи кінетичне рівняння Больцмана. Окремо розглянуто випадки сильно виродженого та виродженого електронного газу в плівках плюмбум телуриду n-тупу провідності. Теоретично показано осцилюючий характер термоелектричних залежностей параметрів наноструктур на основі n-PbTe для випадку виродженого і сильно виродженого електронного газу

Size effects in p-PbTe nanostructures on polyamide

The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences in the range of quantum theory was done

Thermoelectric property features of PbTe monocrystalline and polycrystalline films

The equations of a regression were obtained by methods of mathematical planning of manyfactors experiments. These equations determine a dependence of thermoelectric parameters of PbTe thin films prepared by hot wall the method from technological factors: temperatures of evaporation, walls of the chamber and deposition. PbTe thin films were layed sieged on pins (111) of BaF₂ monocrystals and on amorphous polyamid fillet PM-1. The ranges of change of these thermoelectic parametres were determined. They respond to the best values of thermoelectric parameters of PbTe thin films. It is shown that the value of thermoelectric parameters of PbTe thin polycrystalline films is bigger in several times then the monocrystalline ones

CRYSTAL-QUASICHEMICAL ANALYSIS OF DEFECT SUBSYSTEM OF DOPED PbTe: Sb CRYSTALS AND Pb-Sb-Te SOLID SOLUTIONS

Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb2Те3: replacement of antimony ions lead sites  with the formation of cation vacancies  (I) or neutral interstitial tellurium atoms  (II) were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb2Те3 solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.</p

Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS

The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies

QUANTUM-DIMENSIONAL EFFECTS IN THERMOELECTRIC CHARACTERISTICS OF LEAD CHALCOGENIDES NANOSTRUCTURES

On the basis of theoretical model of quantum well (QW) with infinitely high walls it was investigated thermoelectric parameters depending on the thickness of the layer of nanostructures IV-VI (PbS, PbSe, PbTe) in the approximation of changing Fermi energy. There have been shown that the dependences of the Seebeck coefficient, electrical conductivity and thermoelectric power factor on well width for lead chalcogenides nanofilms are in good agreement with the experimental data. So, that proves the correctness of used model