Neue Duennschichtverfahren durch 'Molecular Engineering' metallorganischer Verbindungen. Teilprojekt: Untersuchung der Plasmaparameter Abschlussbericht

Organometallic compounds are used as precursors in MOPECV processes to deposit various layer materials. In this project the plasma parameters for the deposition of metals (Al, Cu), nitrides (TiN, BN) and amorphous boron-carbon-nitrogen layers (BCN:H) by considering the molecular structure of the precursor were investigated. The deposition of pure Al and Cu layers is only feasible without plasma enhancement due to the activation of the carbon containing ligands. It was shown that a direct Al-C bond in the precursor molecule leads to a preferred codeposition of carbon. A plasma activated nucleation step substancially lowers the nucleation barrier and can therefore be used as pretreatment to deposit Al or Cu with a low surface roughness by conventional MOCVD. The deposition of cubic boron nitride using N-trimethylborazine (TMB) requires a high ion density and ion energy. Thus, an ECR (Electron Cyclotron Resonance) plasma feeded with an argon/nitrogen mixture and an appropriate substrate bias was used. The high density of argon ions leads to the formation of highly crosslinked BCN:H network employing TMB. A micro hardness of about 30 GPa could be achieved. For the first time pure TiN layers could be deposited at temperatures as low as 100 C by employing tetrakis(dimethylamido)titanium (TDMAT). TDMAT was introduced into the downstream region of a nitrogen or ammonia ECR plasma. Experiments with labeled nitrogen showed clearly that the nitrogen in TiN is originated from the plasma activated nitrogen and not from the precursor molecule. (orig.)SIGLEAvailable from TIB Hannover: F95B1220+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Diamant als Elektronikmaterial Abschlussbericht

Heteroepitaxial diamond thin films on different oriented silicon substrates with improved thermal and electrical properties were prepared by chemical vapour deposition (CVD) and were characterized by scanning tunneling and atomic force microscopy. Diamond/#beta#-SiC composite films prepared by microwave plasma assisted chemical vapour deposition (MWCVD) exhibits an increased diamond-substrate adhesion. Dielectric strength and insulation power of polycrystalline diamond films were improved by an increased phase purity as well as by nitrogen incorporation. Results of the diamond film deposition, of selective diamond nucleation and epitaxy together with results of in situ doping with boron represent the basis for new diamond construction elements. (WEN)SIGLEAvailable from TIB Hannover: F95B2338+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Diamantbeschichtung komplexer Geometrien Hochskalierung des Heissdraht-CVD-Prozesses zur Diamantabscheidung Abschlussbericht

Diamond films on hard metal-, Al_2O_3-, Si_3N_4- and Si substrates have been deposited at 10-40 mbar from different gas atmospheres using micro wave plasma (mwp) chemical vapour deposition (cvd). The influence of substrate pretreatment, deposition temperature and micro wave plasma on the adhesive strength has been studied by the Rockwell test, and coating adhesion was compared with materials obtained by the filament hf-cvd process. It is demonstrated that hf-cvd is much more suited for diamond coating of complex substrates than the mwp-cvd process. Tantalum and rhenium as filament materials in hf-cvd are sufficient stable under oxygen-free atmosphere, and rhenium is stable even in the presence of oxygen. For hf-cvd process optimization the influence of filament geometry filament-substrate distance and gas convection on diamond deposition has been studied. (WEN)SIGLEAvailable from TIB Hannover: F95B1376+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

PVD-Verfahren bei niedrigen Temperaturen und neue Schichtsysteme Abschlussbericht

Available from TIB Hannover: F94B1057+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Neue Duennschichtverfahren durch molecular engineering-Reaktorentwicklung Abschlussbericht

There have been no previous works in the field of constructing a universal reactor for R and D and pilot production purposes. There are numerous publications concerned with the different principles of operation of a CVD reactor. It was the goal of the project to be able to supply potential german users with a thin film CVD reactor that fulfills the demands put forward by the task to transfer results from R and D to production. Intensive discussions with all users of the reactor and simulation of the impact of hardware changes to deposition results helped to minimize the time and effort put into construction and building of the system. A number of problems have been solved during the project having impact on the complete range of products of PLASMOS: Mechanical integration of a module to the MESC compatible cluster handler of an integrator, design and establishment of the electrical and data interfaces of the module with the complete system and development of a professional real time software. This project was PLASMOS' first step in the field multichamber processing using single wafer and load lock. The reactor technique necessary for potential users is now available. Applications can be found in all fields of thin film technologies.(orig.)Available from TIB Hannover: F95B1423+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Diamantschichten mit kontrollierter Rauhigkeit. Teilvorhaben: Untersuchung der funktionellen Eigenschaften rauher Diamantschichten Abschlussbericht

Available from TIB Hannover: F98B699 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Neue Duennschichtverfahren durch Molecular Engineering Metallorganischer Verbindungen. Teilvorhaben: MOV-Synthese Abschlussbericht

1) Using metal- and element chlorides in addition with ammonia as reacting gas to create thin films of metal- and element nitrides (TiN, BN, AlN). Using aluminium trialkyls and trimethylamin-alan to generate thin films of aluminium. Tungstenhexafluoride as precursor for tungsten-CVD. 2) Presenting new perspectives in generating of thin films of metals, metal- and element nitrides by working out and evaluation of new suitable OMCVD-precursors. 3) Working out and synthesis of small amounts of volatile, decomposable compounds with compositions and structures accomodated to the required properties of the layer by molecular engineering. Analyses of these compounds with regard to structure, physical datas and properties. Preliminary CVD-investigations; analysis of the layers by scanning microscopy, X-ray and measurement of conductivity. 4) Synthesis, characterisation and CVD-investigations of these special organometallic compounds with regard to point 3. 5) Suitable OMCVD-precursors for depositing thin films of copper, boron nitride, titanium and titanium nitride could be found, evaluated and -especially in the case of copper (tert-Butylisonitrile-complexes)- successfully prooved to be fit for CVD-process. (orig.)SIGLEAvailable from TIB Hannover: F95B913+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman