Polytektische Strukturierungsverfahren. Laterale und vertikale Feinstrukturierungen von III/V-Schichtsystemen

Available from TIB Hannover: F96B1700+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Nitridische Verbindungshalbleiter mit hohem Bandabstand. Teilprojekt: Metallorganische Gasphasenepitaxie von nitridischen Verbindungshalbleitern mit hohem Bandabstand fuer blaue LEDs Abschlussbericht

Because of their band structure the semiconductors GaN, (InGa)N and (AlGa)N are ideally suited for the fabrication of optoelectronic devices in the blue and near UV spectral range. This project aimed at the development of device grade nitride MOCVD single layers and layer sequences on saphire substrate and of the process technology for the fabrication of blue, violet and UV LED chips. The MOCVD deposition technique for In_xGa_1_-_xN (x#<=#0.2), GaN and Al_xGa_1_-_xN (x#<=#0.2) single layers and multi layers suitable for LED operation was developed in close cooperation with the material characterization. The substrate temperature and the low temperature GaN nucleation layer turned out to be very important parameters for growth of high quality GaN films. Special attention was paid to the optimization of p-conduction in GaN:Mg and (AlGa)N:Mg and to the growth of high quality (InGa)N films. The lithography-, etching-, and metallization processes required for lateral patterning of 2'' wafers were worked out. Apart from n-GaN:Si layers, p-GaN:Mg, p-(AlGa)N:Mg, and (InGa)N single layers with very good quality can be grown reproducibly. Completely housed green, blue, and violet radial LEDs have been demonstrated. By the end of the project the emitted power for violet (410 nm) and UV (394 nm) LED chips amounted to 0.46 and 0.34 mW, respectively, at a drive current of 40 mA. (orig.)SIGLEAvailable from TIB Hannover: F99B881+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Hochleistungsdiodenlaser und diodengepumpte Festkoerperlaser / Innovative Lasersysteme auf der Basis von Hochleistungsdiodenlasern. Grundlegende Untersuchungen zur Technologie von Hochleistungsdiodenlasern. Teilvorhaben: Halbleiterdiodenlaser mit hoher Brillanz fuer den Direkteinsatz in der Materialbearbeitung oder als Pumpquelle fuer Festkoerper/Faserlaser Abschlussbericht

Available from TIB Hannover: DtF QN1(99,24) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Photonik II. Optische Verbindungstechnik (Optische Mikrowellenverbindungen). Teilvorhaben: Empfaenger-OEIC fuer GHz-Millimeterwellensignale Abschlussbericht

According to the specifications of the project partner Alcatel SEL the IAF has developed, produced and characterized amplifier MMICs with more than 25 dB gain rate at 60 GHz and delivered to the partners. According to the requirements of Alcatel SEL additional amplifiers with a higher saturated power were developed during the project trying to extend the maximum possible radio distance. Accordingly, the IAF has developed and produced a power amplifier with a P_-_1_d_B-power of more than 20 dBm and 60 GHz. Based on the MMICs developed by the IAF Alcatel was able to build a powerful amplifier module with 55 dB gain. The InGaAs-PIN-photodiodes has been successfully integrated in the existing GaAs-HEMT-MMIC-process with a gate-length of 0.15 #mu#m for millimeter wave circuits. First optical receivers for hybrid-fiber radio-systems at 42 GHz have been successfully produced. (orig.)SIGLEAvailable from TIB Hannover: DtF QN1(68,56) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Integrierte Mikrokuehlsysteme fuer elektronische Baugruppen (KUeHLSYS). Teilprojekt: CVD-Diamant-Waermespreizer mit Zusatzfunktionen: Simulation, thermomechanische Charakterisierung und Komponentenentwicklung Abschlussbericht

Available from TIB Hannover: F99B502+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Umwelt- und Gesundheitsauswirkungen der Herstellung und Anwendung sowie Entsorgung von Bauelementen und integrierten Schaltungen der Mikro- und Optoelektronik Kenntnisstandbericht der Vorstudie (Phase 1)

SIGLEAvailable from TIB Hannover: F93B268+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Identifizierung und Charakterisierung von Punktdefekten in Siliziumkarbid Abschlussbericht

SIGLEAvailable from TIB Hannover: F97B2357+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Optische Verbindungssysteme (Optosys). Teilvorhaben: Modulkomponenten fuer die optische On-Board und Inter-Board Uebertragung (MoKom) Abschlussbericht

Available from TIB Hannover: F03B934 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Quantenstruktursysteme auf der Basis von III-V-Halbleitern. Teilvorhaben: Neue Heterostrukturen fuer Komponenten der Kommunikationstechnik Abschlussbericht

SIGLEAvailable from TIB Hannover: F00B1365+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Hochintegrierte Mikrowellenkomponenten fuer aktive Phased-Array-Antennen Schlussbericht

This study is embedded in the research program 'III-V-Electronics, Integrated Circuits for Highest Speed' (DFE), of the German Ministry of Education, Science, Research and Technology (BMBF). Herein, the international level of research and development in the III-V-semiconductor-area, could be reached again. Some subareas even showed international top-level-results. In future radio links, reconfigurable foot-print-areas are needed. This can be achieved by planar antennas with adjustable patterns. For this, two cost-effective microwave monolithic integrated circuits with high reliability were developed. To drive the antenna elements, a new amplitude-/phaseshifter MMIC was developed. A demonstrator has shown good function of the antenna. Linearity and thus power efficiency of solid state power amplifiers could be optimized by a new type of linearizer MMIC. In cooperation with the DFE-partner Siemens, a demonstrator combining this MMIC together with a driver and a power amplifier MMIC has proven the feasibility of the concept. All MMICs have been fabricated at the 'Institute for Applied Solid State Physcis of the Fraunhofer Gesellschaft' (FhG/IAF) with their GaAs/GaAlAs-HFET-technology. The study has been performed in close cooperation with this institute. (orig.)SIGLEAvailable from TIB Hannover: F96B1324+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman