Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic devices with such band structures. The traditional Kane’s tunnelling model can only be applied to homostructures. An extension to heterostructures is developed to study interband tunneling probability in InP-based heterostructures and the resulting tunnelling current is calculated

Towards a fully integrated indium-phosphide membrane on silicon photonics platform

\u3cp\u3eIn this work we present an integrated platform based on an InP membrane adhesively bonded to a silicon wafer. The platform allows for flexible design of wafer scale active and passive nanophotonic circuits. Advantages of this platform are the flexible fabrication process, large variety of integrated active and passive devices in one photonic layer, high index contrast of devices and therefore small footprint of complex circuits. We demonstrated several building blocks and devices, fabricated in the platform: semiconductor optical amplifiers, lasers and several passive devices, exploiting the high index contrast. Potential of the platform offers the integration of novel high speed devices using regrowth approach.\u3c/p\u3

BCB bonding of high topology 3 inch InP and BiCMOS wafers for integrated optical transceivers

In this publication the challenges of bonding InP and BiCMOS wafers with high topology are described. A possible process is discussed. Planarization with thick BCB is motivated and the challenges of wafer alignment are explained

InP membrane lasers and active-passive integration

In this paper we review the recent developments in the nanophotonic platform IMOS. High-performance optical amplifier based on twin-guide active-passive integration scheme has been demonstrated, enabling continuous wave operated lasers on IMOS. Future work will seek to integrate more advanced components, such as >67GHz detectors, polarization controllers and optical modulators in the same membrane

Towards a fully integrated indium-phosphide membrane on silicon photonics platform

Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier

A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs

We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing

Improving thermal performance of a UTC photodetector in the IMOS platform

Recently a uni-traveling carrier photodetector (UTC-PD) with a 3 dB bandwidth beyond 67 GHz was presented [1]. The device shows good performance up to 3 mA of photocurrent but experiences thermal failure (see Fig. 1a) at higher currents due to the poor heat extraction in membrane-type devices. Improvements to the thermal design are proposed that promise to double the possible photocurrent before thermal failure, which makes the performance comparable with state-of-the-art SOI UTC-PDs [2]

Reflecting AWG by using photonic crystal reflector on Indium-phosphide membrane on silicon platform

\u3cp\u3eIn this letter, a reflection-type arrayed waveguide grating (AWG) (de)multiplexer using high-reflection photonic crystal reflector (PCR) in the Indium-phosphide Membrane on Silicon (IMOS) platform is proposed and experimentally demonstrated for the first time. This reflection-type AWG enables a 35% size-reduced footprint compared with the traditional transmission-type AWG having the same spectral parameters. Considering the realized performance of silicon-nanowire R-AWGs, an acceptable performance ( 680×190 μ m\u3csup\u3e2\u3c/sup\u3e size, 6.7-dB loss, and 10-dB crosstalk) is obtained. By using the ultra-small 5.4× 0.7μm\u3csup\u3e2\u3c/sup\u3e PCR, merely 1.1-dB power loss higher than the corresponding transmission-type AWG is implemented. The PCR is a standard building block with a reflectivity of >90%. Besides, the length reduction of the arrayed waveguide will contribute to minimize the accumulated phase error in fabrication.\u3c/p\u3

Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured

InP membrane on silicon (IMOS) photonics

\u3cp\u3eInP membranes have appeared in the last decade as a viable integrated photonics platform, suitable for adding photonic functions to silicon electronics. It combines the strengths of silicon photonics (high index contrasts and therefore small footprint devices) with those of generic InP-platforms (monolithic integration of active and passive devices). A range of functionalities has been developed on this platform, which goes by the name of Indium phosphide membrane on silicon (IMOS). Competitive performances have been demonstrated for lasers, fast detectors, waveguides, filters, couplers, modulators, and more. Here, we provide an overview of IMOS and describe recent developments regarding technology and devices. This includes record low propagation losses, plasmonic waveguides, a variety of laser structures, and improved wavelength demuliplexers. These developments demonstrate that IMOS has potential to deliver photonic integrated circuits to a wide variety of application fields, e.g. telecom, datacom, sensing, terahertz, and many others.\u3c/p\u3