Magnetic Exciton-Polariton with Strongly Coupled Atomic and Photonic Anisotropies

Anisotropy plays a key role in science and engineering. However, the interplay between the material and engineered photonic anisotropies has hardly been explored due to the vastly different length scales. Here we demonstrate a matter-light hybrid system, exciton-polaritons in a 2D antiferromagnet, CrSBr, coupled with an anisotropic photonic crystal (PC) cavity, where the spin, atomic lattice, and photonic lattices anisotropies are strongly correlated, giving rise to unusual properties of the hybrid system and new possibilities of tuning. We show exceptionally strong coupling between engineered anisotropic optical modes and anisotropic excitons in CrSBr, which is stable against excitation densities a few orders of magnitude higher than polaritons in isotropic materials. Moreover, the polaritons feature a highly anisotropic polarization tunable by tens of degrees by controlling the matter-light coupling via, for instance, spatial alignment between the material and photonic lattices, magnetic field, temperature, cavity detuning and cavity quality-factors. The demonstrated system provides a prototype where atomic- and photonic-scale orders strongly couple, opening opportunities of photonic engineering of quantum materials and novel photonic devices, such as compact, on-chip polarized light source and polariton laser

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors.

Bi4I4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi4I4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi4I4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity