Inventions of Scientists, Engineers and Specialists from Different Countries in the Area of Nanotechnologies. Part III

Introduction. Advanced technologies impress people’s imagination demonstrating the latest achievements (materials, methods, systems, technologies, devices etc.) that dramatically change the world. This, first of all, concerns nanotechnological inventions designed by scientists, engineers and specialists from different countries. Main part. The article provides an abstract review of patents. The results of creative activity of scientists, engineers and specialists, including inventions in the field of nanotechnology and nanomaterials, being implemented, allow achieving a significant effect in construction, housing and community services, and related sectors of the economy. For example, the invention «Composite material with oriented carbon nanotubes» refers to the area of composite materials which consist of polymer matrix and filler that is often presented by carbon nanotubes. The technical result is increased tensile strength of composite material due to formation of structure of oriented carbon nanotubes in polymer matrix. That is performed by means of flat-rate flow of direct current which destroys filler agglomerates. The specialists can also be interested in the following inventions in the area of nanotechnologies: a method to produce powder containing nanocrystalline cubic tungsten carbide; a method to produce porous graphene membranes and the membranes produced with this method; suppressor coating on the basis of polymer matrix with inclusion of carbon nanotubes and a method to produce it; a method to determine location of polyethylene gas pipeline and places of possible illegal tapping of those pipeline; a method to produce biphasic thermoelectric ceramics; electron-beam system of 3D radiant nanomodification for materials and articles; lab-on-fruit skin and lab-on-leaf towards recognition of trifluralin using Ag-citrate/GQDs nanocomposite stabilized on the flexible substrate: A new platform for the electroanalysis of herbicides using direct writing of nano-inks and pen-on paper technology; and others. Conclusion. One of the most challenging tasks the economy of every country face is to increase industrial competitiveness through technological upgrade. From the side of the state and companies the principal object to control in this process are the people and enterprises dealing with introduction of inventions and new technologies

Inventions of Scientists, Engineers and Specialists from Different Countries in the Area of Nanotechnologies. Part VI

Introduction. Advanced technologies impress people\u27s imagination demonstrating the latest achievements (materials, methods, systems, technologies, devices etc.) that dramatically change the world. This, first of all, concerns nanotechnological inventions designed by scientists, engineers and specialists from different countries. Main part. The article provides an abstract overview of inventions of scientists, engineers and specialists from different countries: Russia, USA, China, Kazakhstan, Sweden. The results of the creative activity of scientists, engineers and specialists, including inventions in the field of nanotechnology and nanomaterials allow, when introduced to industry, achieving a significant effect in construction, housing and communal services, and related sectors of the economy. For example, the invention \u27A method to obtain polymer-composite material and a composite reinforcement \u3e\u3e relates to construction materials and is designed to reinforce building structures, that allows obtaining strengthened stressed composite reinforcement with improved physical-mechanical characteristics, increased resistance to aggressive environments. A method to obtain polymer-composite material is a multi-stage production of colloid solution on the basis of epoxy resin with addition of carbon nanotubes and applying heat and ultrasound impact. Introduction of modifiers (fillers) in polymer matrix in a certain ratio and fillers orientation make it possible to create a polymer strengthened for mechanical loads and with increased resistance to aggressive media (acid-resistance and alkali-resistance). The following inventions in the field of nanotechnology can also be interesting for specialists: a method to obtain biocide suspension applied on wallpaper and wall finishings, a method of aerosol spraying of nanoparticles in constant electric field, a method to obtain amorphous nanostructured diamond-like coating, a polymer composite heat-conducting paste with nanofiber modifier, a plant to provide controlled electroimpulse obtaining of nanoparticles of current conducting materials, etc. Conclusion. One of the most challenging tasks the economy of every country faces is to increase industrial competitiveness through technological upgrade. From the side of the state and companies the principal object to control in this process are the people and enterprises dealing with introduction of inventions and new technologies

32-Channel silicon strip detection module for combined X-ray fluorescence spectroscopy and X-ray diffractometry analysis

A compact detection module for the simultaneous measurement of XRF and XRD in portable analytical applications, in particular in the mining sector, is presented. The detector head is based on 32 silicon strip detectors, fabricated with a low-leakage technology by FBK and readout by two 16-channel low-noise CUBE charge-sensitive amplifiers. The design of the module and its characterization are reported. Multiple configurations are experimentally compared in terms of strip length, spacing, collimation and charge sharing effects. The optimal configuration for a strip length of 6 mm and pitch 0.2 mm is thus identified. It offers an energy resolution of better than 200 eV at 5.9 keV with moderate cooling (−10°C) and peaking time of 14 μs

Solid phase epitaxial re-growth of Sn ion implanted germanium thin films

Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create GeSn layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×10, 1×10 and 5×10 at/cm, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm SiNO film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×10 at/cm samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget. © 2012 American Institute of Physics

ВЛИЯНИЕ ПОЛИМОРФИЗМА ГЕНА КАТЕХОЛ-О-МЕТИЛТРАНСФЕРАЗЫ (COMT) НА ТОЧНОСТЬ ДВИЖЕНИЙ КВАЛИФИЦИРОВАННЫХ СПОРТСМЕНОВ

The aim of the study was to find correlation between COMT gene alleles and the target precision of the athlete movement. 68 Russian competing athletes involved in boxing and volleyball, participated in the study. We found interrelation between COMT Met allele and a tall stature in the volleyball players.Цель исследования заключалась в выявлении взаимосвязи аллелей гена COMT с целевой точностью движений спортсменов. В исследовании приняли участие 68 действующих российских квалифицированных спортсменов, занимающихся боксом и волейболом. Обнаружена взаимосвязь между высоким ростом и COMTMet-аллелем у волейболисток

GrailQuest & HERMES: Hunting for Gravitational Wave Electromagnetic Counterparts and Probing Space-Time Quantum Foam

Within Quantum Gravity theories, different models for space-time quantisation predict an energy dependent speed for photons. Although the predicted discrepancies are minuscule, GRB, occurring at cosmological distances, could be used to detect this signature of space-time granularity with a new concept of modular observatory of huge overall collecting area consisting in a fleet of small satellites in low orbits, with sub-microsecond time resolution and wide energy band (keV-MeV). The enormous number of collected photons will allow to effectively search these energy dependent delays. Moreover, GrailQuest will allow to perform temporal triangulation of high signal-to-noise impulsive events with arc-second positional accuracies: an extraordinary sensitive X-ray/Gamma all-sky monitor crucial for hunting the elusive electromagnetic counterparts of GW. A pathfinder of GrailQuest is already under development through the HERMES project: a fleet of six 3U cube-sats to be launched by 2021/22

Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls

As it is well known, Ge undergoes a peculiar surface nanostructuration under heavy ion implantation at room temperature [1,2]. In fact, once a threshold dose (~5-10x1014 at/cm2) is reached, the formation of a relatively regular nanostructured network of columnar voids with ~20 nm diameter and ~100 nm depth occurs. The formation mechanism of these structures seems to be strongly dependent on the different vacancy and interstitial mobility in Ge and clustering of vacancy [2]. In this work, Ge (1.5 µm thick film epitaxial on Si(100) or bulk) was implanted with 5-100x1014 Sn+/cm2. A protective layer (SiNx) with different thickness (0, 10 nm, 20 nm) was deposited on Ge to prevent contamination of the nanostructures and to act on voids formation, to modify their size, dimension and symmetries [3]. The implantation energies were tuned in order to obtain the same Sn distribution in samples with the same dose but different protective layer thickness. Our goal is the formation of nanostructures with Ge1-xSnx walls through thermal treatment of our samples, in order to combine the peculiar properties of Ge1-xSnx alloy (tunable bandgap[4], high electron and hole mobility[5]) with the Ge nanostructures. Electronic microscopy (TEM cross sections and SEM plan views) and AFM measurements allowed the morphologic characterization of our samples. SAD measurements gave information on the crystallization degree. Moreover SIMS and RBS measurements provided information on Sn distribution and damaged layer thickness. XPS characterization was used to investigate the Ge oxidation degree as a function of the air exposition time and the identification of other contaminants. [1] I. Wilson, J. Appl. Phys. 53(3), 1698, 1982 [2] N.G. Rudawski and K.C. Jones, J. Mater. Res. 28(13), 1633, 2013 [3] T. Janssens et al, J. Vac. Sci. technol. B 24(1), 2006, 510 [4] G. He and H.A. Atwater, Phys. Rev. Lett., 79, (2007), 1937. [5] J.D. Sau and M.L. Cohen, Phys. Rev. B, 75, (2007), 045208

Dynamic SIMS Characterization of Ge1-xSnx alloy

Semiconducting Ge1-xSnx alloy offers exciting possibilities for bandgap and strain engineering in a silicon compatible technology, because of its tunable bandgap [1] and possibility of high electron and hole mobilities [2]. High hole mobilities in Ge1-xSnx based pMOSFETs has already been demonstrated [3,4]. Furthermore, due to the larger size of Sn atoms, use of GeSn as source/drain in Ge pMOSFETs has been used to provide channel compressive strain to boost hole mobility [5]. For all those applications, it is mandatory to define analytical approaches able to give accurate measurements of Sn content, since this parameter can affect both the induced strain and/or the carrier mobility. In this work, SIMS characterization of ad-hoc prepared samples will be presented in order to define analytical protocols to quantify Sn content in Ge. In particular, 1.5 µm thick Ge films epitaxially grown on Si (100) were used. Beside MBE grown Ge1-xSnx films with well controlled Sn concentration (≤ 7%), some reference samples were prepared by ion implantation. Since ion irradiation of high mass species on Ge is known to induce a characteristic “honeycomb” damage structure, impossible to anneal out with conventional thermal treatments [6, 7], ion implantation was carried out at liquid nitrogen to avoid the void formation [8] and three implant doses were tested: 5x1015 at/cm2, 1x1015 at/cm2 and 5x1014 at/cm2. Implant energy was set at 45 keV and implants were carried out through an 11 nm SiNx film. SIMS characterization was carried out in different configurations, i.e. using O2+ as primary beam and collecting positive secondary ions, Cs+ and negative secondary ions and finally Cs+ collecting MCs+ ions. Results will be compared with quantitative measurements obtained by Rutherford backscattering and issues about quantification will be addressed. [1] G. He and H.A. Atwater, Phys. Rev. Lett., 79, (2007), 1937. [2] J.D. Sau and M.L. Cohen, Phys. Rev. B, 75, (2007), 045208. [3] S. Gupta et al., IEDM 2011, [4] G. Han et al., IEDM 2011, [5] B. Vincent et al., Microelectronic Eng. 88(4), (2011), 342. [6] I.H. Wilson, J. Appl. Phys. 53(3), (1982), 1698. [7] L. Romano et al., J. Appl. Phys. 107, (2010), 084314. [8] G. Impellizzeri et al, J. Appl. Phys. 106, (2009), 013518