Ionic and electronic properties of the topological insulator Bi2_2Te2_2Se investigated using β\beta-detected nuclear magnetic relaxation and resonance of 8^8Li

We report measurements on the high temperature ionic and low temperature electronic properties of the 3D topological insulator Bi$_2$Te$_2$Se using ion-implanted $^8$Li $\beta$-detected nuclear magnetic relaxation and resonance. With implantation energies in the range 5-28 keV, the probes penetrate beyond the expected range of the topological surface state, but are still within 250 nm of the surface. At temperatures above ~150 K, spin-lattice relaxation measurements reveal isolated $^8$Li$^{+}$ diffusion with an activation energy $E_{A} = 0.185(8)$ eV and attempt frequency $\tau_{0}^{-1} = 8(3) \times 10^{11}$ s$^{-1}$ for atomic site-to-site hopping. At lower temperature, we find a linear Korringa-like relaxation mechanism with a field dependent slope and intercept, which is accompanied by an anomalous field dependence to the resonance shift. We suggest that these may be related to a strong contribution from orbital currents or the magnetic freezeout of charge carriers in this heavily compensated semiconductor, but that conventional theories are unable to account for the extent of the field dependence. Conventional NMR of the stable host nuclei may help elucidate their origin.Comment: 17 pages, 12 figures, submitted to Phys. Rev.

Depth-resolved measurement of the Meissner screening profile in a niobium thin film from spin-lattice relaxation of the implanted β\beta-emitter 8^{8}Li

We report measurements of the Meissner screening profile in a Nb(300 nm)/Al$_{2}$O$_{3}$ thin film using $^{8}$Li $\beta$-detected nuclear magnetic resonance ($\beta$-NMR). The NMR probe $^{8}$Li was ion-implanted into the Nb film at energies $\leq$ 20 keV, corresponding to mean stopping depths comparable to Nb's magnetic penetration depth $\lambda$. $^{8}$Li's strong dipole-dipole coupling with the host $^{93}$Nb nuclei provided a "cross-relaxation" channel that dominated in low magnetic fields, which conferred indirect sensitivity to the local magnetic field via the spin-lattice relaxation (SLR) rate $1/T_{1}$. From a fit of the $1/T_{1}$ data to a model accounting for its dependence on temperature, magnetic field, and $^{8}$Li$^{+}$ implantation energy, we obtained a magnetic penetration depth $\lambda_{0}$ = 51.5(22) nm, consistent with a relatively short carrier mean-free-path $\ell$ = 18.7(29) nm typical of similarly prepared Nb films. The results presented here constitute an important step towards using $^{8}$Li $\beta$-NMR to characterize bulk Nb samples with engineered surfaces, which are often used in the fabrication of particle accelerators.Comment: 16 pages, 4 figure

Ion-Implanted 8^8Li Nuclear Magnetic Resonance in Highly Oriented Pyrolytic Graphite

We report $\beta$-detected nuclear magnetic resonance of ultra-dilute $^{8}$Li$^{+}$ implanted in highly oriented pyrolytic graphite (HOPG). The absence of motional narrowing and diffusional spin-lattice relaxation implies Li$^+$ is not appreciably mobile up to 400 K, in sharp contrast to the highly lithiated stage compounds. However, the relaxation is remarkably fast and persists down to cryogenic temperatures. Ruling out extrinsic paramagnetic impurities and intrinsic ferromagnetism, we conclude the relaxation is due to paramagnetic centers correlated with implantation. While the resulting effects are not consistent with a Kondo impurity, they also differ from free paramagnetic centers, and we suggest that a resonant scattering approach may account for much of the observed phenomenology

Nuclear magnetic resonance of ion implanted 8^8Li in ZnO

We report on the stability and magnetic state of ion implanted $^8$Li in single crystals of the semiconductor ZnO using $\beta$-detected nuclear magnetic resonance. At ultradilute concentrations, the spectra reveal distinct Li sites from 7.6 to 400 K. Ionized shallow donor interstitial Li is stable across the entire temperature range, confirming its ability to self-compensate the acceptor character of its (Zn) substitutional counterpart. Above 300 K, spin-lattice relaxation indicates the onset of correlated local motion of interacting defects, and the spectra show a site change transition from disordered configurations to substitutional. Like the interstitial, the substitutional shows no resolved hyperfine splitting, indicating it is also fully ionized above 210 K. The electric field gradient at the interstitial $^8$Li exhibits substantial temperature dependence with a power law typical of non-cubic metals.Comment: 15 pages and 11 figure

Quantum error mitigation in quantum annealing

Quantum Error Mitigation (QEM) presents a promising near-term approach to reduce error when estimating expectation values in quantum computing. Here, we introduce QEM techniques tailored for quantum annealing, using Zero-Noise Extrapolation (ZNE). We implement ZNE through zero-temperature extrapolation as well as energy-time rescaling. We conduct experimental investigations into the quantum critical dynamics of a transverse-field Ising spin chain, demonstrating the successful mitigation of thermal noise through both of these techniques. Moreover, we show that energy-time rescaling effectively mitigates control errors in the coherent regime where the effect of thermal noise is minimal. Our ZNE results agree with exact calculations of the coherent evolution over a range of annealing times that exceeds the coherent annealing range by almost an order of magnitude.Comment: 10 pages, 5 figure

Local Electronic Structure and Dynamics of Muon-Polaron Complexes in Fe2 O3

We perform detailed muon spin rotation (μSR) measurements in the classic antiferromagnet Fe2O3 and explain the spectra by considering dynamic population and dissociation of charge-neutral muon-polaron complexes. We show that charge-neutral muon states in Fe2O3, despite lacking the signatures typical of charge-neutral muonium centers in nonmagnetic materials, have a significant impact on the measured μSR frequencies and relaxation rates. Our identification of such polaronic muon centers in Fe2O3 suggests that isolated hydrogen (H) impurities form analogous complexes, and that H interstitials may be a source of charge carrier density in Fe2O3.ISSN:0031-9007ISSN:1079-711