High efficiency CdTe solar cells by low temperature deposition with MgZnO HRT layer

CdTe solar cells have shown high efficiency and the technology is scalable. As a result thin film CdTe modules are competitive with crystalline silicon modules. Thin film CdTe devices with efficiency above 22% have been reported using high substrate temperatures during the deposition process. It is known that high substrate temperatures result in large grain size with a reduced number of grain boundaries and this is believed to contribute to the high efficiency. However, use of high temperature requires robust substrates and excludes the use of most flexible substrate materials. It also involves higher energy consumption and more complicated machinery. In this work we present a process for high efficiency solar cells with an improved front contact, by introducing magnesium-doped zinc oxide high resistance transparent layer. By optimizing the fabrication process we have achieved a conversion efficiency exceeding 16%, which is one of the highest reported for substrate temperatures below 500°C

Magnesium-doped zinc oxide as a high resistance transparent layer for thin film CdS/CdTe solar cells

Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and deposited on an Indium Tin Oxide contact (ITO). Thin film CdTe devices including a MZO high resistance transparent layer deposited at above 300◦C yielded a mean efficiency exceeding 10.5 %. This compares with an efficiency of 8.2 % without the MZO layer. The improvement in efficiency was due to a higher open circuit voltage and fill factor. Lowering the deposition temperature of MZO reduced the performance of the devices