New compact power cells for Ku band applications

International audienceThis paper reports on the design of new power cells based on GaAs PHEMT transistors with 0.25μm gate length in MMIC technology. The design starts from a fishbone power cell initially designed by United Monolithic Semiconductors (UMS). This one allows us to validate the elementary transistor model. This model is used for other power cells design as cascode cell

Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers

International audienceThis paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called "integrated cascode" has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors

Design of an Integrated Cascode Cell for Compact Ku-Band Power Amplifiers.

International audienceThis paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called '"integrated cascode"' has been designed in order to propose a strong decrease in term of circuit size for Power Amplifier (PA). The technology used relies on 0.25-µm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists to obtain, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate development. In order to design a 2W amplifier, we have used two 12×100 µm transistors. Cascode vertical size is 413 µm whereas a transistor with the same gate development exhibits a vertical size of 790 µm. Therefore the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows to decrease the MMIC amplifier area of 40 % compared with amplifier based on single transistors

Nouvelles cellules de puissance compactes pour des applications bande Ku en technologie MMIC

National audienceUne conception dune nouvelle cellule de puissance à base de transistor PHEMT AsGa de longueur de grille 0.25 μm en technologie MMIC est présentée dans ce papier. Le point de départ est la cellule de puissance fishbone développée initialement par UMS. Cette dernière va nous permettre de valider un modèle de transistor de petite taille qui sera utilisé pour la conception dautres cellules de puissances telles que la cellule cascode