Fabrication of small laterally patterned multiple quantum wells

A technique of high voltage electron beam lithography and BCI_3/Ar reactive ion etching for laterally patterning GaAs/Al_0_3 Ga_(0.7) As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated

Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

Dissipation in nanocrystalline-diamond nanomechanical resonators

We have measured the dissipation and frequency of nanocrystalline-diamond nanomechanical resonators with resonant frequencies between 13.7 MHz and 157.3 MHz, over a temperature range of 1.4–274 K. Using both magnetomotive network analysis and a time-domain ring-down technique, we have found the dissipation in this material to have a temperature dependence roughly following T^(0.2), with Q^(–1) ≈ 10^(–4) at low temperatures. The frequency dependence of a large dissipation feature at ~35–55 K is consistent with thermal activation over a 0.02 eV barrier with an attempt frequency of 10 GHz

First-principles calculation of mechanical properties of Si <001> nanowires and comparison to nanomechanical theory

We report the results of first-principles density functional theory calculations of the Young's modulus and other mechanical properties of hydrogen-passivated Si nanowires. The nanowires are taken to have predominantly {100} surfaces, with small {110} facets according to the Wulff shape. The Young's modulus, the equilibrium length and the constrained residual stress of a series of prismatic beams of differing sizes are found to have size dependences that scale like the surface area to volume ratio for all but the smallest beam. The results are compared with a continuum model and the results of classical atomistic calculations based on an empirical potential. We attribute the size dependence to specific physical structures and interactions. In particular, the hydrogen interactions on the surface and the charge density variations within the beam are quantified and used both to parameterize the continuum model and to account for the discrepancies between the two models and the first-principles results.Comment: 14 pages, 10 figure

Strong coupling between single-electron tunneling and nano-mechanical motion

Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio frequency potential using a nearby antenna. Single-electron charge fluctuations created periodic modulations of the mechanical resonance frequency. A quality factor exceeding 10^5 allows the detection of a shift in resonance frequency caused by the addition of a single-electron charge on the nanotube. Additional evidence for the strong coupling of mechanical motion and electron tunneling is provided by an energy transfer to the electrons causing mechanical damping and unusual nonlinear behavior. We also discovered that a direct current through the nanotube spontaneously drives the mechanical resonator, exerting a force that is coherent with the high-frequency resonant mechanical motion.Comment: Main text 12 pages, 4 Figures, Supplement 13 pages, 6 Figure

Surface dissipation in nanoelectromechanical systems: Unified description with the standard tunneling model and effects of metallic electrodes

By modifying and extending recent ideas [C. Seoanez et al., Europhys. Lett. 78, 60002 (2007)], a theoretical framework to describe dissipation processes in the surfaces of vibrating micro- and nanoelectromechanical devices, thought to be the main source of friction at low temperatures, is presented. Quality factors as well as frequency shifts of flexural and torsional modes in doubly clamped beams and cantilevers are given, showing the scaling with dimensions, temperature, and other relevant parameters of these systems. Full agreement with experimental observations is not obtained, leading to a discussion of limitations and possible modifications of the scheme to reach a quantitative fitting to experiments. For nanoelectromechanical systems covered with metallic electrodes, the friction due to electrostatic interaction between the flowing electrons and static charges in the device and substrate is also studied.Comment: 17 pages, 7 figure

Quantum Effects in the Mechanical Properties of Suspended Nanomechanical Systems

We explore the quantum aspects of an elastic bar supported at both ends and subject to compression. If strain rather than stress is held fixed, the system remains stable beyond the buckling instability, supporting two potential minima. The classical equilibrium transverse displacement is analogous to a Ginsburg-Landau order parameter, with strain playing the role of temperature. We calculate the quantum fluctuations about the classical value as a function of strain. Excitation energies and quantum fluctuation amplitudes are compared for silicon beams and carbon nanotubes.Comment: RevTeX4. 5 pages, 3 eps figures. Submitted to Physical Review Letter