Proteome-wide profiling of the MCF10AT breast cancer progression model

10.1371/journal.pone.0011030PLoS ONE56

Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology

Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation

Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process

Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transistors. We show that our approach is compatible with very large scale integration, allowing for parallel fabrication of up to 144 scalable devices. HSQ process optimisation allowed for realisation of reproducible QD dimensions of 50 nm and tunnel junction down to 25 nm. We observed that 80% of the fabricated devices had dimensional variations of less than 5 nm. These are the smallest high density double QD transistors achieved to date. Single electron simulations combined with preliminary electrical characterisations justify the reliability of our device and process

Free-electron laser results from the Advanced Test Accelerator

PALADIN is a 10.6-..mu..m FEL amplifier experiment operating at the Lawrence Livermore National Laboratory's Advanced Test Accelerator, an induction linear accelerator designed to produce a 45-MeV, 10-kA electron beam. With a 15-m long wiggler, PALADIN demonstrated 27 dB of exponential gain from a 14-kW input signal. With a 5-MW input signal, the amplifier saturated after 10 dB of gain. The exponentially growing signal in the unsaturated amplifier was clearly seen to be gain guided by the electron beam. 7 refs., 8 figs

Realization of Al FinFET single electron turnstile co-integrated with a close proximity electrometer SET

In the past few years, spin qubits in Si quantum dots (QDs) have demonstrated great potential to fulfill the Loss DiVincenzo quantum computing criteria [1]. Although good controllability of single electron spins has been demonstrated for QDs defined on the two-dimensional electron gas (2DEG) formed at the GaAs/AlGaAs heterojunction by using top-down lithography [2], the coherence of electron spins deteriorates rapidly in GaAs due to rich nuclear spins in GaAs. Electron spins confined in silicon based QDs are expected to have longer coherence time thanks to the low nuclear spin density of silicon based materials, with coherence times as long as 6 seconds recently been demonstrated [3]. This has further asserted the advantage of using Si as a platform to realize spin qubits and several Si QD structures have been investigated in silicon on insulator (SOI) [4], [5] and Si (2DEG) [6]. In previous work, we have presented the design and simulation of a novel SOI-based spin qubit platform using Al FinFET gates and Si side gates. The simulations demonstrated the ability of this platform to transfer, confine and detect single electrons [7], [8]. In this letter, we report a novel fabrication process to realize high density silicon based QDs with close proximity Al and Si gates on ultrathin SOI for spin qubit applications

Initial measurements of beam breakup instability in the advanced test accelerator

This paper reports the measurements of beam breakup (BBU) instability performed on the Advanced Test Accelerator (ATA) up to the end of February, 1984. The main objective was to produce a high current usable electron beam at the ATA output. A well-known instability is BBU which arises from the accelerator cavity modes interacting with the electron beam. The dominant mode is TM/sub 130/ at a frequency of approximately 785 MHz. It couples most strongly to the beam motion and has been observed to grow in the Experimental Test Accelerator (ETA) which has only eight accelerator cavities. ATA has one hundred and seventy cavities and, therefore, the growth of BBU is expected to be more severe. In this paper, BBU measurements are reported for ATA with beam currents of 4 to 7 kA. Analysis showed that the growth of the instability with propagation distance was as expected for the lower currents. However, the high-current data showed an apparent higher growth rate than expected. An explanation for this anomaly is given in terms of a ''corkscrew'' excitation. The injector BBU noise level for a field emission brush cathode was found to be an order of magnitude lower than for a cold plasma discharge cathode. These injector rf amplitudes agree very well with values obtained using the method of differenced B sub solar loops

Electronic band-structure of Mg1-xZnxSySe1-y semiconductor alloy

Materials Research Society Symposium Proceedings326139-144MRSP

Optical loop framing

The ATA provides an electron beam pulse of 70-ns duration at a 1-Hz rate. Our present optical diagnostics technique involve the imaging of the visible light generated by the beam incident onto the plant of a thin sheet of material. It has already been demonstrated that the light generated has a sufficiently fast temporal reponse in performing beam diagnostics. Notwithstanding possible beam emittance degradation due to scattering in the thin sheet, the observation of beam spatial profiles with relatively high efficiencies has provided data complementary to that obtained from beam wall current monitors and from various x-ray probes and other electrical probes. The optical image sensor consists of a gated, intensified television system. The gate pulse of the image intensifier can be appropriately delayed to give frames that are time-positioned from the head to the tail of the beam with a minimum gate time of 5-ns. The spatial correlation of the time frames from pulse to pulse is very good for a stable electron beam; however, when instabilities do occur, it is difficult to properly assess the spatial composition of the head and the tail of the beam on a pulse-to-pulse basis. Multiple gating within a pulse duration becomes desirable but cannot be performed because the recycle time (20-ms) of the TV system is much longer than the beam pulse. For this reason we have developed an optical-loop framing technique that will allow the recording of two frames within one pulse duration with our present gated/intensified TV system

Whole cell environmental biosensor on diamond

10.1039/b719881gAnalyst1336739-743ANAL