Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment

In this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices

Substrate-Free Transfer of Large-Area Ultra-Thin Electronics

Innovation in materials and technologies has promoted the fabrication of thin-film electronics on substrates previously considered incompatible because of their chemical or mechanical properties. Indeed, conventional fabrication processes, typically based on photolithography, involve solvents and acids that might harm fragile or exotic substrates. In this context, transfer techniques define a route to overcome the issues related to the nature of the substrate by using supportive carriers in the electronics stack that mitigate or avoid any damages during the fabrication process. Here, a substrate-free approach is presented for the transfer of ultra-thin electronics (<150nm-thick) where no additional layer besides the electronics one remains on the final substrate. Devices are transferred on several surfaces showing good adhesion and an average performance variation of 27%. Furthermore, a sensor bent to a radius of 15.25µm, shows variation in performance of 5%. The technique can also be sequentially repeated for the fabrication of stacked electronics, enabling the development of ultra-thin devices, compliant on unconventional surfaces

Flexible In-Ga-Zn-O based circuits with two and three metal layers: simulation and fabrication study

The quest for high-performance flexible circuits call for scaling of the minimum feature size in Thin-Film Transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic Computer-Aided Design (CAD) simulations have guided the fabrication of highperformance flexible operational amplifiers (opamps) and logic circuits based on Indium-Gallium-Zinc-Oxide (IGZO) TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections has been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50μm thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gainbandwidth- product (GBWP) increased by 16:9%, for the first one, and propagation delay (tpd) decreased by 43%, for the latter one

Investigation of the impact of neutron irradiation on SiC power MOSFETs lifetime by reliability tests

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were con-ducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence up to 2 × 1011 (n/cm2). Electrical characterization performed pre and post-irradiation on different part number of power devices (Si, SiC MOSFETs and IGBTs) which survived to neutron irradiation tests does not show alteration of the data-sheet electrical parameters due to neutron interaction with the device

Tops and Writhing DNA

The torsional elasticity of semiflexible polymers like DNA is of biological significance. A mathematical treatment of this problem was begun by Fuller using the relation between link, twist and writhe, but progress has been hindered by the non-local nature of the writhe. This stands in the way of an analytic statistical mechanical treatment, which takes into account thermal fluctuations, in computing the partition function. In this paper we use the well known analogy with the dynamics of tops to show that when subjected to stretch and twist, the polymer configurations which dominate the partition function admit a local writhe formulation in the spirit of Fuller and thus provide an underlying justification for the use of Fuller's "local writhe expression" which leads to considerable mathematical simplification in solving theoretical models of DNA and elucidating their predictions. Our result facilitates comparison of the theoretical models with single molecule micromanipulation experiments and computer simulations.Comment: 17 pages two figure

The radial arrangement of the human chromosome 7 in the lymphocyte cell nucleus is associated with chromosomal band gene density

This is the author's accepted manuscript. The final published article is available from the link below. Copyright @ Springer-Verlag 2008.In the nuclei of human lymphocytes, chromosome territories are distributed according to the average gene density of each chromosome. However, chromosomes are very heterogeneous in size and base composition, and can contain both very gene-dense and very gene-poor regions. Thus, a precise analysis of chromosome organisation in the nuclei should consider also the distribution of DNA belonging to the chromosomal bands in each chromosome. To improve our understanding of the chromatin organisation, we localised chromosome 7 DNA regions, endowed with different gene densities, in the nuclei of human lymphocytes. Our results showed that this chromosome in cell nuclei is arranged radially with the gene-dense/GC-richest regions exposed towards the nuclear interior and the gene-poorest/GC-poorest ones located at the nuclear periphery. Moreover, we found that chromatin fibres from the 7p22.3 and the 7q22.1 bands are not confined to the territory of the bulk of this chromosome, protruding towards the inner part of the nucleus. Overall, our work demonstrates the radial arrangement of the territory of chromosome 7 in the lymphocyte nucleus and confirms that human genes occupy specific radial positions, presumably to enhance intra- and inter-chromosomal interaction among loci displaying a similar expression pattern, and/or similar replication timing