7,121 research outputs found
Spin relaxation in diluted magnetic semiconductor quantum dots
Electron spin relaxation induced by phonon-mediated s-d exchange interaction
in a II-VI diluted magnetic semiconductor quantum dot is investigated
theoretically. The electron-acoustic phonon interaction due to piezoelectric
coupling and deformation potential is included. The resulting spin lifetime is
typically on the order of microseconds. The effectiveness of the
phonon-mediated spin-flip mechanism increases with increasing Mn concentration,
electron spin splitting, vertical confining strength and lateral diameter,
while it shows non-monotonic dependence on the magnetic field and temperature.
An interesting finding is that the spin relaxation in a small quantum dot is
suppressed for strong magnetic field and low Mn concentration at low
temperature.Comment: 11 pages, 11 figures, to be published in Phys. Rev.
Permutation branes and linear matrix factorisations
All the known rational boundary states for Gepner models can be regarded as
permutation branes. On general grounds, one expects that topological branes in
Gepner models can be encoded as matrix factorisations of the corresponding
Landau-Ginzburg potentials. In this paper we identify the matrix factorisations
associated to arbitrary B-type permutation branes.Comment: 43 pages. v2: References adde
Fully electrically read-write device out of a ferromagnetic semiconductor
We report the realization of a read-write device out of the ferromagnetic
semiconductor (Ga,Mn)As as the first step to fundamentally new information
processing paradigm. Writing the magnetic state is achieved by current-induced
switching and read-out of the state is done by the means of the tunneling
anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device
can be used to design a electrically programmable memory and logic device.Comment: 4 pages, 4 figure
Integrability of the N=2 boundary sine-Gordon model
We construct a boundary Lagrangian for the N=2 supersymmetric sine-Gordon
model which preserves (B-type) supersymmetry and integrability to all orders in
the bulk coupling constant g. The supersymmetry constraint is expressed in
terms of matrix factorisations.Comment: LaTeX, 19 pages, no figures; v2: title changed, minor improvements,
refs added, to appear in J. Phys. A: Math. Ge
Lithographic engineering of anisotropies in (Ga,Mn)As
The focus of studies on ferromagnetic semiconductors is moving from material
issues to device functionalities based on novel phenomena often associated with
the anisotropy properties of these materials. This is driving a need for a
method to locally control the anisotropy in order to allow the elaboration of
devices. Here we present a method which provides patterning induced anisotropy
which not only can be applied locally, but also dominates over the intrinsic
material anisotropy at all temperatures
Moduli Webs and Superpotentials for Five-Branes
We investigate the one-parameter Calabi-Yau models and identify families of
D5-branes which are associated to lines embedded in these manifolds. The moduli
spaces are given by sets of Riemann curves, which form a web whose intersection
points are described by permutation branes. We arrive at a geometric
interpretation for bulk-boundary correlators as holomorphic differentials on
the moduli space and use this to compute effective open-closed superpotentials
to all orders in the open string couplings. The fixed points of D5-brane moduli
under bulk deformations are determined.Comment: 41 pages, 1 figur
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