Метод CRAMM - комплексный подход к оценке рисков

The article shows the use of the method CRAMM for risk management and research of information security systems

Dynamical aspects of carrier transport in quantumwell intersubband photodetectors

We report on the dynamics of the transport processes which determine the photoresponse of quantum well intersubband infrared detectors. Immediately after intersubband excitation, coherent transport is important. This process can be identified via interference effects between photoexcited carriers. The carriers are re-captured subsequently within a few picoseconds. These fast transport processes give rise to space charges, which induce an additional, slow component of the photocurrent in the ns to mu s regime

Hochleistungsdiodenlaser und diodengepumpte Festkoerperlaser / Innovative Lasersysteme auf der Basis von Hochleistungsdiodenlasern. Grundlegende Untersuchungen zur Technologie von Hochleistungsdiodenlasern. Teilvorhaben: Halbleiterdiodenlaser mit hoher Brillanz fuer den Direkteinsatz in der Materialbearbeitung oder als Pumpquelle fuer Festkoerper/Faserlaser Abschlussbericht

Available from TIB Hannover: DtF QN1(99,24) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Mesoskopische Baulemente. InAs/AlSb/GaSb-Tunnelstrukturen: Neuartige Bauelemente auf der Basis von Antimoniden

This project aimed at the development of the deposition and processing technology of InAs/AlSb/GaSb-heterostructures, the characterization of the materials properties, and the demonstration of inter-band tunnel diodes. The Molecular Beam Epitaxy (MBE) of the heterostructures has been developed and the interface structure of the layers was optimized. This was achieved by using a variety of analytical techniques, including structural, electronic, and optical characterization methods. The doping and processing techniques have been developed and inter-band tunnel-diodes with the layer sequence InAs/AlSb/GaSb/AlSb/InAs were realized. The current/voltage characteristics of these devices exhibits a region of negative differential resistance. 'Peak to valley' current ratios of 20:1 with maximum current densities of 3 kA/cm"2 have been achieved. Small tunnel diodes with 4 #mu#m diameter have been used for dynamical characterization; and oscillation frequencies of 16 GHz were demonstrated. (orig.)Available from TIB Hannover: F96B1746+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Monolithische MOPA-Leistungslaserdioden auf GaAs-Substraten fuer hohe optische Ausgangsleistungen Abschlussbericht

Available from TIB Hannover: DtF QN1(62,48) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Optoelektronische Komponenten fuer starre und konfigurierbare optische Nahverbindungssysteme Abschlussbericht

SIGLEAvailable from TIB Hannover: D.Dt.F.QN1(13,20) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman