13 research outputs found

    Laser Processing For 3D Junctionless Transistor Fabrication

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    International audienceTo take fully advantage of Junctionless transistor (JLT) low cost and low temperature feature we investigate a 475°C process to create onto a wafer a thin poly-Si layer on insulator. We fabricated a 13nm doped (Phosphorous, 10 19 at/cm 3) poly-silicon film featuring excellent roughness values (R max = 1.6nm and RMS=0.2nm). Guidelines for grain size optimization with nanosecond (ns) laser annealing are given. 3D monolithic integration; Junction-less transistor; poly-si

    Differential impact of acclimation and acute water deprivation in the expression of key transcription factors in soybean roots.

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    Made available in DSpace on 2018-08-02T00:51:02Z (GMT). No. of bitstreams: 1 GuimaraesDias2016ArticleDifferentialImpactOfAcclimatio.pdf: 1585766 bytes, checksum: b5c8e22e6fbd68595aab558d06b3b26a (MD5) Previous issue date: 2016-11-10bitstream/item/180696/1/Guimaraes-Dias2016-Article-DifferentialImpactOfAcclimatio.pd
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