Analysis of Fuzzy Logic based Textual Meaning Inference Approach for Comment Content Estimation in Social Networks

In recent years, social networking has become a very popular communication tool among internet users connected by one or more relationships. Thousands or even millions of users share their experiences and opinions on different aspects of life everyday through social networking communities. The positive or negative content of the comments posted by the members of the social network can arouse great interest among the members of the social network group. Understanding social networks requires the analysis of structural relationships and interaction patterns between users. In this paper, an analysis of fuzzy logic based textual meaning inference analysis was performed for the estimation of content in social networks. The positive comments made by the members on the social networks have the positive effect for the users to read comments. In this context, our semantic inference approach is analyzed with the help of fuzzy logic where the content of comment can be positive or negative. According to the input values in the fuzzy logic system, the relevant interpretation can be positive or negative. Considering that the results of the obtained system yields highly accurate results, we think that our fuzzy logic based semantic inference approach can be used in many social networks.WOS:00054527870001

Developing and modeling of voice control system for prosthetic robot arm in medical systems

In parallel with the development of technology, various control methods are also developed. Voice control system is one of these control methods. In this study, an effective modelling upon mathematical models used in the literature is performed, and a voice control system is developed in order to control prosthetic robot arms. The developed control system has been applied on four-jointed RRRR robot arm. Implementation tests were performed on the designed system. As a result of the tests; it has been observed that the technique utilized in our system achieves about 11% more efficient voice recognition than currently used techniques in the literature. With the improved mathematical modelling, it has been shown that voice commands could be effectively used for controlling the prosthetic robot arm. Keywords: Voice recognition model, Voice control, Prosthetic robot arm, Robotic control, Forward kinemati

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

WOS: 000399709300008Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDs) were produced and their current-voltage (I-V) characteristics were measured in the positive and negative bias regions at 300 K. The basic electronic quantities such as reverse-saturation current (I-o ), ideality factor (n), zero-bias barrier height (Phi(B0) ), series (R-s) and shunt resistances (R-sh) were obtained by using I-V data in total darkness and illumination (100 W/m(2)). The values of these parameters were found as 7.79 x 10(-9) A, 5.41, 0.75 eV, 1 k Omega and 130 M Omega in dark) and 4 x 10(-9) A, 4.89, 0.77 eV, 0.9 k Omega and 1.02 M Omega under illumination), respectively. Also the energy density distribution behaviors of surface states (N-ss ) have been acquired by calculation of effective barrier height (Phi(e) ) and ideality factor n (V) depending on voltage in total darkness and illumination. The values of N (ss) show an exponentially increase from the mid-gap of Si to the lower part of conduction band (E-c ) for two conditions. The possible current conduction mechanisms were determined by plotting of the double logarithmic I-V plots in the positive voltage zone and the value of current was found proportional to voltage (I similar to V (m) ). The high values of n and R-s were ascribed to the certain density distribution of N-ss localized at semiconductor /PPy interface, surface conditions, barrier inequality, the thickness of PPy interlayer and its roughness. The open-circuit voltage of the photodiode was found as 0.36 V under 100 W/m(2) illumination level. This is evidence that the fabricated sample is very sensitive to illumination. Therefore, it can be put into practice in optoelectronic industries as a photodiode or solar cells

Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes

WOS: 000361624200020The dielectric properties of Au/PPy/n-Si metal-polymer-semiconductor (MPS)-type Schottky barrier diodes (SBDs) were investigated by using capacitance-voltage (C-V) and conductancevoltage (G/omega-V) measurements at various temperatures and voltages at frequencies of 100 kHz and 500 kHz. Both the real and the imaginary parts of the complex dielectric constant and dielectric loss (epsilon', epsilon aEuro(3)) and of the electric modulus (M', MaEuro(3)), as well as the conductivity (sigma (ac) ), were found to depend strongly on the temperature and the voltage. Both the C and G/omega values increased with increasing applied voltage and had inversion, depletion, and accumulation regions as with a metal-insulator-semiconductor (MIS) type behavior. Both the dielectric constant (epsilon') and the dielectric loss (epsilon aEuro(3)) increased with increasing temperature and decreased with increasing frequency. The loss tangent (tan delta) vs. temperature curve had a peak at about 200 K for both frequencies. The M' and the MaEuro(3) values decreased with increasing temperature and became independent of the frequency at high temperatures. The series resistance (R (s) ) of the diode decreased with increasing temperature for the two frequencies while the sigma (ac) increased. Such behaviors of the dielectric properties with temperature were attributed to the restructuring and reordering of charges at interface states/traps due to the varying temperature, the interfacial polarization, and the interfacial polymer layer. ln(sigma (ac) ) vs. q/kT plots had two distinct linear regions with different slopes for the two frequencies. Such behaviors of these plots confirmed the existence of two different conduction mechanisms corresponding to low and high temperatures. The values of the activation energy (E (a) ) were obtained from the slopes of these plots, and its value at low temperatures was considerably lower than that at high temperatures