Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature

We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong {\Gamma} to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is in good agreement with the electron spin polarization expected for optical orientation at the direct gap of Ge

Paramagnon-Enhanced Spin Currents in a Lattice near the Curie Point

Spin transport phenomena have been shown to be highly enhanced when the temperature approaches the Curie point of the material sustaining a spin flow. Here we propose a simple - yet unifying - explanation for such enhancements, based on a random-phase model accounting for the spin fluctuations within a ferromagnetic material in the paramagnetic phase. We show that pure spin currents carried by conduction electrons injected into a paramagnetic lattice of mutually interacting localized magnetic moments can be enhanced close to the Curie temperature by the exchange interaction between the lattice sites and the non vanishing spin density associated with the spin current. The latter partially aligns the magnetic moments of the lattice, generating a flow of paramagnons that contribute to the total spin current, resulting in an enhancement that can be as large as tenfold

Pure spin currents in Ge probed by inverse spin-Hall effect

We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Γ point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Γ−L scattering in the Ge conduction band, which partially preserves the spin polarization, electrons diffuse into the Pt layer where spin-dependent scattering with Pt nuclei yields a transverse electromotive field EISHE. The ISHE signal dependence as a function of the incident photon energy is investigated and interpreted in the frame of a one-dimensional spin drift-diffusion model. This allows estimating the electron spin lifetime at the L-valleys to be τs=1 ns

Optical generation of pure spin currents at the indirect gap of bulk Si

We report on the optical generation of a pure spin current at the indirect gap of bulk Si at room temperature in the photon energy range comprised between 1.2 and 1.8 eV. Spin-polarized electrons are promoted to the Δ-valleys of the Si Brillouin zone by circularly polarized light. The photo-generated spin current is then detected by exploiting a Schottky Pt/Si(001) junction: spin-polarized electrons diffuse toward the Pt/Si interface and enter the Pt layer where the spin current is converted into a transverse electromotive field through the inverse spin-Hall effect (ISHE). The photon energy dependence of the ISHE signal is interpreted in the frame of a one-dimensional spin drift-diffusion model, which allows estimating the electron spin lifetime to be τs=15±5 ns

Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1)

The spin features of surface resonance bands in single layer Bi on Ge(1 1 1) are studied by means of spin- and angle-resolved photoemission spectroscopy and inverse photoemission spectroscopy. We characterize the occupied and empty surface states of Ge(1 1 1) and show that the deposition of one monolayer of Bi on Ge(1 1 1) leads to the appearance of spin-polarized surface resonance bands. In particular, the C 3v symmetry, which Bi adatoms adopt on Ge(1 1 1), allows for the presence of Rashba-like occupied and unoccupied electronic states around the [Formula: see text] point of the Bi surface Brillouin zone with a giant spin-orbit constant [Formula: see text] eV · Å