Microscopic Model of Heteroepitaxy of GaAs on Si(100)

A new microscopic model of heteroepitaxial growth is introduced using GaAs on Si(100) as a prototype. This model takes into account specific features of surface topology, predicts that in the prototype system conventional two-dimensional epitaxy should be inhibited, and provides a fundamental explanation for three-dimensional nature of the initial stages of growth. The ingredients of the model, which are supported by total-energy calculations, include new structural geometries for each state of growth and the chemical and rehybridization reactions linking these stages.Engineering and Applied Science

Semiconductor Surface Studies

Contains research summary and reports on two research projects.Joint Services Electronics Program (Contract DAAL03-86-K-0002)Joint Services Electronics Program (Contract DAAL03-89-C-0001

Semiconductor Surface Studies

Contains an introduction and reports on two research projects.Joint Services Electronics Program Contract DAAL03-89-C-000