Compound semiconductor nanotube materials grown and fabricated

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good crystalline quality of InGaP, InGaAs, and GaAs materials was obtained through optimizing the growth condition. The fabricated GaAs/InGaAs/InGaP semiconductor nanotubes, with a diameter of 300 to 350 nm and a length of 1.8 to 2.0 μm, were achieved through normal device fabrication

The safety and efficacy of TACE combined with HAIC, PD-1 inhibitors, and tyrosine kinase inhibitors for unresectable hepatocellular carcinoma: a retrospective study

ObjectiveTo assess the effectiveness and safety of transarterial chemoembolization (TACE) in combination with hepatic artery infusion chemotherapy (HAIC)、PD-1 inhibitors, and tyrosine kinase inhibitors(TKI) for unresectable hepatocellular carcinoma (HCC).MethodsA retrospective analysis was performed on 158 unresectable HCC patients admitted to the First Affiliated Hospital of Nanchang University between May 2019 and October 2022. The patients were split into two groups based on the type of treatment they received: TACE combined with HAIC,PD-1 and TKI group (THPK) and TACE combined with PD-1 and TKI group (TPK). The response was evaluated using modified solid tumor Efficacy Assessment Criteria (mRECIST). Kaplan-Meier curves were used to analyze the overall survival (OS). OS-influencing factors were identified using the Cox proportional risk regression model.ResultsFinally, 63 patients who received THPK treatment and 60 patients who had TPK treatment were included. The THPK group had higher DCR (77.78% vs. 55.00%, P=0.007) and ORR (20.63% vs. 13.34%, P=0.282) than the TPK group did. The survival analysis curve also showed that the median OS was substantially longer in the THPK group than in the TPK group (OS: 21 months vs. 14 months, P=0.039). After multivariate Cox regression-corrected analysis, extrahepatic metastases (P=0.002) and methemoglobin >400 (P=0.041) were adverse influences on OS, but the THPK group (relative to the TPK group) was an independent favorable prognostic factor for OS (P=0.027). The results of the subgroup analysis showed that the addition of HAIC therapy to TPK treatment in patients with BCLC stage C, age ≦60 years, ECOG grade 0 and lobular distribution of tumors prolonged overall survival time and improved prognosis. Except for nausea, there was no difference in the adverse events between the two groups.ConclusionIn patients with unresectable HCC, the THPK group had a longer OS and similar adverse events compared to the TPK group. In the future, TACE-HAIC in combination with targeted and immunotherapy may be a more effective therapeutic option for hepatocellular carcinoma that cannot be surgically removed

Bilateral Multiple Extraocular Muscle Metastasis from Hepatocellular Carcinoma

Hepatocellular carcinoma (HCC) rarely metastasizes to the extra ocular muscles (EOMs). We present a case of bilateral metastasis of HCC to the EOMs and focus on the magnetic resonance imaging (MRI) features. Orbital MRI revealed nodular enlargement of bilateral multiple EOMs, with isointensity on T1-weighted images and heterogeneous, intermediate-to-high signal intensity on T2-weighted images, and showed mild-to-significant heterogeneous contrast enhancement with gadolinium. Physicians should be aware of this rare cause of EOM enlargement, understand the radiologic characteristics of EOM metastasis, and thus make appropriate treatment strategy

InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy

The effects of growth condition on material quality of quinary alloy InGaAsPBi grown by gas source molecular beam epitaxy (GSMBE) were investigated systematically. It is found that 0.1% of Bi incorporation can play the role of surfactant effects and is beneficial to improve the material quality. The roughness of surface RMS measured by atomic force microscope (AFM) is 0.218 nm. Furthermore, the addition of a small amount of bismuth atoms promotes the binding of phosphorus atoms to group III atmos

Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

Carbon-doped InGaAsBi films on InP/Fe (100) substrates have been grown by molecular beam epitaxy (MBE). It has been found that Bismuth incorporation induces extremely high n-type carbon-doped InGaAsBi films, and its electron concentration increases linearly up to 10(21) cm(-3) (highest reported to date for n-type III-V semiconductor materials) with increased CBr4 supply pressure, implying InGaAsBi to be a prospective ohmic contact material for InP-based terahertz transistors. It also has been proved by secondary ion mass spectroscopy that the alloy composition of carbon-doped InGaAsBi is altered by the preferential etching effect of CBr4, but the etching effect on the Bi content is negligible. ERNATHY CR, 1995, APPLIED PHYSICS LETTERS, V66, P163