114 research outputs found

    Suppression of Spectral Diffusion by Anti-Stokes Excitation of Quantum Emitters in Hexagonal Boron Nitride

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    Solid-state quantum emitters are garnering a lot of attention due to their role in scalable quantum photonics. A notable majority of these emitters, however, exhibit spectral diffusion due to local, fluctuating electromagnetic fields. In this work, we demonstrate efficient Anti-Stokes (AS) excitation of quantum emitters in hexagonal boron nitride (hBN), and show that the process results in the suppression of a specific mechanism responsible for spectral diffusion of the emitters. We also demonstrate an all-optical gating scheme that exploits Stokes and Anti-Stokes excitation to manipulate spectral diffusion so as to switch and lock the emission energy of the photon source. In this scheme, reversible spectral jumps are deliberately enabled by pumping the emitter with high energy (Stokes) excitation; AS excitation is then used to lock the system into a fixed state characterized by a fixed emission energy. Our results provide important insights into the photophysical properties of quantum emitters in hBN, and introduce a new strategy for controlling the emission wavelength of quantum emitters

    Monolithic Integration of Single Quantum Emitters in hBN Bullseye Cavities

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    The ability of hexagonal boron nitride to host quantum emitters in the form of deep-level color centers makes it an important material for quantum photonic applications. This work utilizes a monolithic circular Bragg grating device to enhance the collection of single photons with 436 nm wavelength emitted from quantum emitters in hexagonal boron nitride. We observe a 6- fold increase in collected intensity for a single photon emitter coupled to a device compared to an uncoupled emitter, and show exceptional spectral stability at cryogenic temperature. The devices were fabricated using a number of etching methods, beyond standard fluorine-based reactive ion etching, and the quantum emitters were created using a site-specific electron beam irradiation technique. Our work demonstrates the potential of monolithically-integrated systems for deterministically-placed quantum emitters using a variety of fabrication options

    Facile Self-Assembly of Quantum Plasmonic Circuit Components

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    Efficient coupling between solid state quantum emitters and plasmonic waveguides is important for the realization of integrated circuits for quantum information, communication and sensing. However, realization of plasmonic circuits is still scarce, particularly due to challenges associated with accurate positioning of quantum emitters near plasmonic resonators. Current pathways for the construction of plasmonic circuits involve cumbersome and costly methods such as scanning atomic force microscopy or mechanical manipulation, where individual elements are physically relocated using the scanning tip. Here, we introduce a simple, fast and cost effective chemical self-assembly method for the attachment of two primary components of a practical plasmonic circuit: a single photon emitter and a waveguide. Our method enables coupling of nanodiamonds with a single quantum emitter (the nitrogen-vacancy (NV) center) onto the terminal of a silver nanowire, by simply varying the concentration of ascorbic acid (AA) in a reaction solution. The AA concentration is used to control the extent of agglomeration, and can be optimised so as to cause preferential, selective activation of the tips of the nanowires. The nanowire-nanodiamond structures show efficient plasmonic coupling of fluorescence emission from single NV centers into surface plasmon polariton (SPP) modes, evidenced by a more than two-fold reduction in fluorescence lifetime and an increase in fluorescence intensity.Comment: Published in Advanced Materials on 2 June 201
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