Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5×10[sup 16] to 3.4×10[sup 18] cm[sup −3]). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.Peer reviewe

REPRESENTATION OF SOCIOLOGICAL DATA IN THE CONTEXT OF LEGAL PROTECTION OF COPYRIGHT PROPERTY IN THE DIGITAL ECONOMY

This article presents the modern aspects of the formation digital objects of copyright (DOC) in the digital economy, as well as their function in modern scientific communication. The peculiarities of copyright protection are analyzed within the framework of traditional protection institutions, as well as using digital technologies based on distributed registries. Using the example of an object of copyright “sociological data” presented in digital form, its structure and description are presented for placement on the IPUniversity platform created by leading Russian universities to test fixing models and sharing the results of intellectual activity