68 research outputs found

    照明史上的第二次革命: 解读2014年诺贝尔物理学奖

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    一种制备InAs室温铁磁性半导体材料的方法

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    本发明公开了一种制备InAs室温铁磁性半导体材料的方法,包括以下步骤:利用化学清剂将InAs单晶片表面清洗干净,并利用酸刻蚀法去除表面氧化层和无机物;将处理干净的InAs单晶片放入沉积设备中,沉积一层金属扩散层;将沉积了金属扩散层的InAs单晶片放入石英管中,并抽真空后密封;将真空封闭的石英管放入加热设备中恒温加热,加速扩散过程;将加热过的石英管切割开后,取出InAs单晶片,并用酸性液体刻蚀掉多余金属。用化学洗剂将InAs单晶片清洗干净,完成制备。利用本发明,能够制备出InAs体单晶的温度在300K以上的铁磁性半导体材料,且整个制备过程中所使用的设备都是技术成熟,产业常用的设备,而且缩短了制备成本和制备时间,非常利于推广

    一种制备用于太阳能电池窗口层的CdS薄膜的方法

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    本发明薄膜太阳能电池制备技术领域,公开了一种制备用于太阳能电池窗口层的CdS薄膜的方法,包括以下步骤:步骤1:利用超声波仪器和化学洗剂将浮法玻璃表面清洗干净,并利用氢氟酸刻蚀法去除其表面的氧化层;步骤2:将清洗干净的浮法玻璃放入沉积设备中,沉积透明电极层;步骤3:将沉积了透明电极层的基片用化学试剂超声清洗;步骤4:将清洗干净的基片放入生长设备中,生长CdS薄膜,完成太阳能电池CdS窗口层的制备。利用本发明,提高了器件的性能,可以利用该CdS薄膜制备大面积、低成本的太阳电池及其他光学器件,使CdS薄膜中杂质浓度降低,增强了CdS薄膜的质量

    Dry processing technology of exhaust gas emitted by roasting of rare earth concentrates with concentrated sulfuric acid

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    At present, wet spraying is the main process for treatment of exhaust gas emitted by the concentrated sulfuric acid roasting method for decomposition of rare earth concentrates, which not only consumes a large amount of resources but also wastes the residual heat corresponding to temperatures of approximately 300 degrees C. In this paper, an exhaust gas dry processing technology that is completely different from the original wet spray process is proposed and successfully implemented in a rare earth roasting kiln. The dry process has successfully realized dust removal, cooling and acid condensation from exhaust gas through a cyclone separator and heat exchange-condensing acid system, and the waste heat can be converted into steam through a steam drum, which greatly simplifies the process for treatment of roasting exhaust gas. Compared with wet spraying, the dry process has the advantages of operational simplicity, small footprint, low energy consumption, low maintenance cost and no wastewater production, which makes it a promising process for the treatment of exhaust gas from rare earth roasting

    一种提高镁在Ⅲ-Ⅴ族氮化物中掺杂效率的方法

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    本发明公开了一种提高镁在III-V族氮化物中掺杂效率的方法,该方法是在镁掺杂的p型III-V族氮化物的表面蒸镀一层2nm至10nm的碲,然后在N2气氛下退火,并用酸性液体洗掉蒸镀在p型III-V族氮化物上的碲。利用本发明,使镁在III-V族氮化物中的掺杂效率大大的提高,增加了p型III-V族氮化物中空穴的浓度
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