用速度成像方法测量碘原子的光电子能谱及角分布

使用离子速度成像（Ｉｏｎ Ｉｍａｇｉｎｇ－Ｖｅｌｏｃｉｔｙ Ｍａｐｐｉｎｇ）技术来测量光电子能谱及其角分布，对碘原子在２７７ｎｍ附近的（２＋１）多光子电离过程Ｉ＾＊（＾２Ｐ１／２）→Ｉ′（＾１Ｄ２）６ｐ［１］１／２→Ｉ＾＋和Ｉ（２Ｐ３／２）→Ｉ′（＾３Ｐ０）６ｐ［１］１／２→Ｉ＾＋进行了研究。与文献报道的结果相比，分辨率要好５倍，相对能量分辨率达到６％。还讨论了速度成像方法中速度分布校正和重构三

Label free electrical detection of prostate specific antigen with millimeter grade biomolecule-gated AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistor (HEMT) was successfully fabricated by complementary metal-oxide semiconductor field effect transistor-compatible fabrication method, and the label-free, electrical detection of prostate specific antigen in real time using the biomolecule-gate AlGaN/GaN HEMT sensor was presented. It shows a rapid response when target prostate biomarker in buffer solution was added to the antibody-immobilized sensing area. The linear range for target prostate specific antigen detection has been demonstrated from 0.1 pg/ml to 10.269 ng/ml and a low detection below 0.1 pg/ml level is estimated, which is the best result of AlGaN/GaN HEMT biosensor for prostate specific antigen (PSA) detection till now. The sensitivity of 0.027 % is determined for 0.1 pg/ml prostate specific antigen solution. The electrical result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for the prostate cancer screening