Size-independent Shear Band Formation in Amorphous Nanowires made from Simulated Casting

Molecular dynamics simulations indicate that surfaces strongly influence the strain localization behavior of amorphous nanowires in tension. A sample preparation routine that simulates casting was employed to facilitate the relaxation of the sample surface. Samples as short as 15 nm (7.5 nm in diameter) form dominant shear bands during deformation. The elastic energy release during plastic deformation is sufficient to provide the excess potential energy required for the shear band nucleation at rather small sample sizes. The results show that shear band formation is almost size-independent and is bounded only by its own length scale.Comment: 13 pages, 3 figures, to be appeared in Appl. Phys. Let

Entanglement Entropy in Integrable Field Theories with Line Defects II. Non-topological Defect

This is the second part of two papers where we study the effect of integrable line defects on bipartite entanglement entropy in integrable field theories. In this paper, we consider non-topological line defects in Ising field theory. We derive an infinite series expression for the entanglement entropy and show that both the UV and IR limits of the bulk entanglement entropy are modified by the line defect. In the UV limit, we give an infinite series expression for the coefficient in front of the logarithmic divergence and the exact defect $g$-function. By tuning the defect to be purely transmissive and reflective, we recover correctly the entanglement entropy of the bulk and with integrable boundary.Comment: 30 pages, references added, typos corrected, publication versio