3,985 research outputs found
Large tunable image-charge effects in single-molecule junctions
The characteristics of molecular electronic devices are critically determined
by metal-organic interfaces, which influence the arrangement of the orbital
levels that participate in charge transport. Studies on self-assembled
monolayers (SAMs) show (molecule-dependent) level shifts as well as
transport-gap renormalization, suggesting that polarization effects in the
metal substrate play a key role in the level alignment with respect to the
metal's Fermi energy. Here, we provide direct evidence for an electrode-induced
gap renormalization in single-molecule junctions. We study charge transport in
single porphyrin-type molecules using electrically gateable break junctions. In
this set-up, the position of the occupied and unoccupied levels can be followed
in situ and with simultaneous mechanical control. When increasing the electrode
separation, we observe a substantial increase in the transport gap with level
shifts as high as several hundreds of meV for displacements of a few \aa
ngstroms. Analysis of this large and tunable gap renormalization with
image-charge calculations based on atomic charges obtained from density
functional theory confirms and clarifies the dominant role of image-charge
effects in single-molecule junctions
Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As
We present a microscopic theory of the long-wavelength magnetic properties of
the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host
semiconductor band structure, described by a six-band Kohn-Luttinger
Hamiltonian, are taken into account. We relate our quantum-mechanical
calculation to the classical micromagnetic energy functional and determine
anisotropy energies and exchange constants. We find that the exchange constant
is substantially enhanced compared to the case of a parabolic heavy-hole-band
model.Comment: 9 pages, 4 figure
Theory of Diluted Magnetic Semiconductor Ferromagnetism
We present a theory of carrier-induced ferromagnetism in diluted magnetic
semiconductors (III_{1-x} Mn_x V) which allows for arbitrary itinerant-carrier
spin polarization and dynamic correlations. Both ingredients are essential in
identifying the system's elementary excitations and describing their
properties. We find a branch of collective modes, in addition to the spin waves
and Stoner continuum which occur in metallic ferromagnets, and predict that the
low-temperature spin stiffness is independent of the strength of the exchange
coupling between magnetic ions and itinerant carriers. We discuss the
temperature dependence of the magnetization and the heat capacity
Monitoramento da multidisciplinaridade no processo de transferência de tecnologia em uma universidade: proposta de análise de cluster
ABSTRACTThis paper discusses the management of the technology transfer process conducted by a Technology Transfer Office (TTO) of a federal public university. Patent co-authorship and multidisciplinarity were used as concepts to evaluate and monitor the quality of academic and practical contribution and their potential for commercial application, using descriptive statistics and cluster analysis. Considering only multidisciplinary patents, binary cluster analysis was conducted, using Jaccard similarity measurement and single linkage method to determine proximity among academic units. Apart from the analysis of the number of patents, the approach enabled discussions and questions regarding the differences between patent generation patterns, resultant from the specific organizational culture and structures. The discussions are relevant to improve the identification of opportunities in technology transfer processes by the TTO
Hole spin polarization in GaAlAs:Mn structures
A self-consistent calculation of the electronic properties of GaAlAs:Mn
magnetic semiconductor quantum well structures is performed including the
Hartree term and the sp-d exchange interaction with the Mn magnetic moments.
The spin polarization density is obtained for several structure configurations.
Available experimental results are compared with theory.Comment: 4 page
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
We formulate a theory of doped magnetic semiconductors such as
GaMnAs which have attracted recent attention for their possible use
in spintronic applications. We solve the theory in the dynamical mean field
approximation to find the magnetic transition temperature as a function
of magnetic coupling strength and carrier density . We find that
is determined by a subtle interplay between carrier density and magnetic
coupling.Comment: 4 pages, 4 figure
Two-component approach for thermodynamic properties in diluted magnetic semiconductors
We examine the feasibility of a simple description of Mn ions in III-V
diluted magnetic semiconductors (DMSs) in terms of two species (components),
motivated by the expectation that the Mn-hole exchange couplings are widely
distributed, expecially for low Mn concentrations. We find, using distributions
indicated by recent numerical mean field studies, that the thermodynamic
properties (magnetization, susceptibility, and specific heat) cannot be fit by
a single coupling as in a homogeneous model, but can be fit well by a
two-component model with a temperature dependent number of ``strongly'' and
``weakly'' coupled spins. This suggests that a two-component description may be
a minimal model for the interpretation of experimental measurements of
thermodynamic quantities in III-V DMS systems.Comment: 10 pages, 9 figures, 1 new figure, substantial revision
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