443 research outputs found

    Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

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    Silicon-on-insulator (SOI) structures implanted with 200 or 400 keV N+ ions at a dose of 7.5 × 1017cm−2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300–700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed by the conventional method of using appropriate optical models and linear regression analysis. We applied a seven-layer model (a surface oxide layer, a thick silicon layer, upper two interface layers, a thick nitride layer and lower two interface layers) with good results. The fitted parameters were the layer thickness and compositions. The results were compared with data obtained from Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy. The sensitivity of our optical model and fitting technique was good enough to distinguish between the silicon-rich transition layers near the upper and lower interfaces of the nitride layer, which are unresolvable in RBS measurements

    Muon spin rotation and relaxation in the superconducting ferromagnet UCoGe

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    We report zero-field muon spin rotation and relaxation measurements on the superconducting ferromagnet UCoGe. Weak itinerant ferromagnetic order is detected by a spontaneous muon spin precession frequency below the Curie temperature TC=3T_C = 3 K. The μ+\mu^+ precession frequency persists below the bulk superconducting transition temperature Tsc=0.5T_{sc} = 0.5 K, where it measures a local magnetic field Bloc=0.015B_{loc} = 0.015 T. The amplitude of the μ\muSR signal provides unambiguous proof for ferromagnetism present in the whole sample volume. We conclude ferromagnetism coexists with superconductivity on the microscopic scale.Comment: 4 pages, 3 figures, accepted for publication in PR

    Simultaneous suppression of ferromagnetism and superconductivity in UCoGe by Si substitution

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    We investigate the effect of substituting Si for Ge in the ferromagnetic superconductor UCoGe. Dc-magnetization, ac-susceptibility and electrical resistivity measurements on polycrystalline UCoGe1x_{1-x}Six_x samples show that ferromagnetic order and superconductivity are progressively depressed with increasing Si content and simultaneously vanish at a critical concentration xcr0.12x_{cr} \simeq 0.12. The non-Fermi liquid temperature variation in the electrical resistivity near xcrx_{cr} and the smooth depression of the ordered moment point to a continuous ferromagnetic quantum phase transition. Superconductivity is confined to the ferromagnetic phase, which provides further evidence for magnetically mediated superconductivity.Comment: 5 pages, 4 figures, accepted for publication in PR

    Validation of the Dutch Land Use MOdelling System (LUMOS)

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    Анализ влияния глобальных угроз на устойчивое развитие стран и регионов мира с помощью байесовских сетей доверия

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    Застосовано байєсівські мережі довіри для встановлення на якісному рівні причинно-наслідкових залежностей між глобальними загрозами і індексами сталого розвитку. Використання запропонованих в роботі методів синтезу мережі довіри та узагальнення результатів моделвання дозволило отримати цілісну інтерпетацію процесів впливу глобальних загроз на сталий розвиток країн і регіонів світу.Belief Bayesian Networks are used to establish the qualitative cause-effect relationships between global threats and indices of sustainable development. The method of belief network synthesis and the method of final results generalization were proposed. This made it possible to obtain a holistic understanding of effects of global threats to the sustainable development of countries and regions of the world

    Vicinal Surfaces and the Calogero-Sutherland Model

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    A miscut (vicinal) crystal surface can be regarded as an array of meandering but non-crossing steps. Interactions between the steps are shown to induce a faceting transition of the surface between a homogeneous Luttinger liquid state and a low-temperature regime consisting of local step clusters in coexistence with ideal facets. This morphological transition is governed by a hitherto neglected critical line of the well-known Calogero-Sutherland model. Its exact solution yields expressions for measurable quantities that compare favorably with recent experiments on Si surfaces.Comment: 4 pages, revtex, 2 figures (.eps

    Connecting polymers to the quantum Hall plateau transition

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    A mapping is developed between the quantum Hall plateau transition and two-dimensional self-interacting lattice polymers. This mapping is exact in the classical percolation limit of the plateau transition, and diffusive behavior at the critical energy is shown to be related to the critical exponents of a class of chiral polymers at the θ\theta-point. The exact critical exponents of the chiral polymer model on the honeycomb lattice are found, verifying that this model is in the same universality class as a previously solved model of polymers on the Manhattan lattice. The mapping is obtained by averaging analytically over the local random potentials in a previously studied lattice model for the classical plateau transition. This average generates a weight on chiral polymers associated with the classical localization length exponent ν=4/3\nu = 4/3. We discuss the differences between the classical and quantum transitions in the context of polymer models and use numerical results on higher-moment scaling laws at the quantum transition to constrain possible polymer descriptions. Some properties of the polymer models are verified by transfer matrix and Monte Carlo studies.Comment: 9 pages, 2 figure

    Interfacial adsorption phenomena of the three-dimensional three-state Potts model

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    We study the interfacial adsorption phenomena of the three-state ferromagnetic Potts model on the simple cubic lattice by the Monte Carlo method. Finite-size scaling analyses of the net-adsorption yield the evidence of the phase transition being of first-order and kBTC/J=1.8166(2)k_{\rm B} T_{\rm C} / J = 1.8166 (2).Comment: 14 page
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