39,647 research outputs found
Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices
In this paper the authors describe a theoretical simple statistical modelling
of relaxation process in metal-oxide semiconductor devices that governs its
degradation. Basically, starting from an initial state where a given number of
traps are occupied, the dynamics of the relaxation process is measured
calculating the density of occupied traps and its fluctuations (second moment)
as function of time. Our theoretical results show a universal logarithmic law
for the density of occupied traps , i.e., the degradation is logarithmic and its amplitude depends on the
temperature and Fermi Level of device. Our approach reduces the work to the
averages determined by simple binomial sums that are corroborated by our Monte
Carlo simulations and by experimental results from literature, which bear in
mind enlightening elucidations about the physics of degradation of
semiconductor devices of our modern life
Notes on the Two-brane Model with Variable Tension
Motivated by possible extensions of the braneworld models with two branes, we
investigate some consequences of a variable brane tension using the well
established results on consistency conditions. By a slight modification of the
usual stress-tensor used in order to derive the braneworld sum rules, we find
out some important constraints obeyed by time dependent brane tensions. In
particular it is shown that the tensions of two Randall-Sundrum like branes
obeying, at the same time, an Eotvos law, aggravate the fine tuning problem.
Also, it is shown that if the hidden brane tension obeys an Eotvos law, then
the visible brane has a mixed behavior allowing a bouncing-like period at early
times while it is dominated by an Eotvos law nowadays. To finalize, we discuss
some qualitative characteristics which may arise in the scope of dynamical
brane tensions, as anisotropic background and branons production.Comment: 7 pages, 1 figure, accepted for publication in Physical Review
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