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    gg-factor anisotropy in nanowire-based InAs quantum dots

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    The determination and control of the electron gg-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the gg-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the gg-factor from the splitting of Kondo resonances and find that it varies continuously in the range between ∣g∗∣=5|g^*| = 5 and 15.Comment: 2 pages, 2 figure
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