A low power ultra-fast current transient measuring device.

We have studied the feasibility of an innovative device to sample 1ns low-power single current transients with a time resolution better than 10 ps. The new concept explored here is to close photoconductive semiconductor switches (PCSS) with a Laser for a period of 10 ps. The PCSSs are in a series along a Transmission Line (TL). The transient propagates along the TL allowing one to carry out a spatially resolved sampling of charge at a fixed time instead of the usual timesampling of the current. The fabrication of such a digitizer was proven to be feasible but very difficult

Longevity Improvement of Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity

Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity

Characteristics of Trap-Filled Gallium Arsenide Photoconductive Switches Used in High Gain Pulsed Power Applications

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently being channeled in the study related to improvements of these two parameters high bias operation and lifetime improvement for switches used in pulsed power applications. The contact material and profiles are another important area of study. Although these problems are being pursued through the incorporation of different contact materials and introducing doping near contacts, it is important that the switch properties and the conduction mechanism in these switches be well understood such that the basic nature of the problems can be properly addressed. In this paper the authors report on these two basic issues related to the device operation, i.e., mechanisms for increasing the hold-off characteristics through neutron irradiation, and the analysis of transport processes at varying field conditions in trap dominated SI GaAs in order to identify the breakdown mechanism during device operation. It is expected that this study would result in a better understanding of photoconductive switches, specifically those used in high power operation

Range-Gated LADAR Coherent Imaging Using Parametric Up-Conversion of IR and NIR Light for Imaging with a Visible-Range Fast-Shuttered Intensified Digital CCD Camera

Research is presented on infrared (IR) and near infrared (NIR) sensitive sensor technologies for use in a high speed shuttered/intensified digital video camera system for range-gated imaging at ''eye-safe'' wavelengths in the region of 1.5 microns. The study is based upon nonlinear crystals used for second harmonic generation (SHG) in optical parametric oscillators (OPOS) for conversion of NIR and IR laser light to visible range light for detection with generic S-20 photocathodes. The intensifiers are ''stripline'' geometry 18-mm diameter microchannel plate intensifiers (MCPIIS), designed by Los Alamos National Laboratory and manufactured by Philips Photonics. The MCPIIS are designed for fast optical shattering with exposures in the 100-200 ps range, and are coupled to a fast readout CCD camera. Conversion efficiency and resolution for the wavelength conversion process are reported. Experimental set-ups for the wavelength shifting and the optical configurations for producing and transporting laser reflectance images are discussed

Near Infrared (NIR) Imaging Techniques Using Lasers and Nonlinear Crystal Optical Parametric Oscillator/Amplifier (OPO/OPA) Imaging and Transferred Electron (TE) Photocathode Image Intensifiers

Laboratory experiments utilizing different near-infrared (NIR) sensitive imaging techniques for LADAR range gated imaging at eye-safe wavelengths are presented. An OPO/OPA configuration incorporating a nonlinear crystal for wavelength conversion of 1.56 micron probe or broadcast laser light to 807 nm light by utilizing a second pump laser at 532 nm for gating and gain, was evaluated for sensitivity, resolution, and general image quality. These data are presented with similar test results obtained from an image intensifier based upon a transferred electron (TE) photocathode with high quantum efficiency (QE) in the 1-2 micron range, with a P-20 phosphor output screen. Data presented include range-gated imaging performance in a cloud chamber with varying optical attenuation of laser reflectance images

<title>Near infrared (NIR) imaging techniques using lasers and nonlinear crystal optical parametric oscillator/amplifier (OPO/OPA) imaging and transferred electron (TE) photocathode image intensifiers</title>

Laboratory experiments utilizing different near-infrared (NIR) sensitive imaging techniques for LADAR range gated imaging at eye-safe wavelengths are presented. An OPO/OPA configuration incorporating a nonlinear crystal for wavelength conversion of 1.56 micron probe or broadcast laser light to 807 nm light by utilizing a second pump laser at 532 nm for gating and gain, was evaluated for sensitivity, resolution, and general image quality. These data are presented with similar test results obtained from an image intensifier based upon a transferred electron (TE) photocathode with high quantum efficiency (QE) in the 1-2 micron range, with a P-20 phosphor output screen. Data presented include range-gated imaging performance in a cloud chamber with varying optical attenuation of laser reflectance images

Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described

A Collective Impact Ionization Theory of Lock-On

PhotoConductive semiconductor switches (PCSS's), such as optically-triggered GaAs switches, have been developed for a variety of applications. Such switches exhibit unique properties associated with lock-on, a phenomenon associated with bistable switching. In this paper lock-on is explained in terms of collective impact ionization