11,185 research outputs found

    Adversarial Convolutional Networks with Weak Domain-Transfer for Multi-sequence Cardiac MR Images Segmentation

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    Analysis and modeling of the ventricles and myocardium are important in the diagnostic and treatment of heart diseases. Manual delineation of those tissues in cardiac MR (CMR) scans is laborious and time-consuming. The ambiguity of the boundaries makes the segmentation task rather challenging. Furthermore, the annotations on some modalities such as Late Gadolinium Enhancement (LGE) MRI, are often not available. We propose an end-to-end segmentation framework based on convolutional neural network (CNN) and adversarial learning. A dilated residual U-shape network is used as a segmentor to generate the prediction mask; meanwhile, a CNN is utilized as a discriminator model to judge the segmentation quality. To leverage the available annotations across modalities per patient, a new loss function named weak domain-transfer loss is introduced to the pipeline. The proposed model is evaluated on the public dataset released by the challenge organizer in MICCAI 2019, which consists of 45 sets of multi-sequence CMR images. We demonstrate that the proposed adversarial pipeline outperforms baseline deep-learning methods.Comment: 9 pages, 4 figures, conferenc

    Double-active-layer index-guided InGaAsP-InP laser diode

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    A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the double-carrier-confinement structure. An anomalously high characteristic temperature T0 was measured, and optical switching behavior was observed. A mode analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that both the Auger recombination in this special double-active-layer configuration and the temperature-dependent leakage current, which leads to uniform carrier distribution in both active regions, are essential to increase T0

    Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm

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    A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, a maximum CW power of 130mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12GHz at an output power of 52mW was observed

    Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3_{3}/SrTi0.99_{0.99}Nb0.01_{0.01}O3_{3}

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    Transport properties have been studied for a perovskite heterojunction consisting of SrRuO3_{3} (SRO) film epitaxially grown on SrTi0.99_{0.99}Nb0.01_{0.01}O3_{3} (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (II-VV) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an nn-type semiconductor (Nb:STO). A hysteresis appears in the II-VV characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 μ\mus - 10 ms duration.Comment: 3 pages, 3 figures, Appl. Phys. Lett., in pres

    A Survey of Positioning Systems Using Visible LED Lights

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    © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.As Global Positioning System (GPS) cannot provide satisfying performance in indoor environments, indoor positioning technology, which utilizes indoor wireless signals instead of GPS signals, has grown rapidly in recent years. Meanwhile, visible light communication (VLC) using light devices such as light emitting diodes (LEDs) has been deemed to be a promising candidate in the heterogeneous wireless networks that may collaborate with radio frequencies (RF) wireless networks. In particular, light-fidelity has a great potential for deployment in future indoor environments because of its high throughput and security advantages. This paper provides a comprehensive study of a novel positioning technology based on visible white LED lights, which has attracted much attention from both academia and industry. The essential characteristics and principles of this system are deeply discussed, and relevant positioning algorithms and designs are classified and elaborated. This paper undertakes a thorough investigation into current LED-based indoor positioning systems and compares their performance through many aspects, such as test environment, accuracy, and cost. It presents indoor hybrid positioning systems among VLC and other systems (e.g., inertial sensors and RF systems). We also review and classify outdoor VLC positioning applications for the first time. Finally, this paper surveys major advances as well as open issues, challenges, and future research directions in VLC positioning systems.Peer reviewe

    Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers

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    Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings

    Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

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    Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced

    Very High Modulation Efficiency of Ultralow Threshold Current Single Quantum Well InGaAs Lasers

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    A record high current modulation efficiency of 5 GHz/[sqrt](mA) has been demonstrated in an ultralow threshold strained layer single quantum well InGaAs laser
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