Active optical clock based on four-level quantum system

Active optical clock, a new conception of atomic clock, has been proposed recently. In this report, we propose a scheme of active optical clock based on four-level quantum system. The final accuracy and stability of two-level quantum system are limited by second-order Doppler shift of thermal atomic beam. To three-level quantum system, they are mainly limited by light shift of pumping laser field. These limitations can be avoided effectively by applying the scheme proposed here. Rubidium atom four-level quantum system, as a typical example, is discussed in this paper. The population inversion between $6S_{1/2}$ and $5P_{3/2}$ states can be built up at a time scale of $10^{-6}$s. With the mechanism of active optical clock, in which the cavity mode linewidth is much wider than that of the laser gain profile, it can output a laser with quantum-limited linewidth narrower than 1 Hz in theory. An experimental configuration is designed to realize this active optical clock.Comment: 5 page

Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers

Record low CW threshold currents of 16 μA at-room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings

Very High Modulation Efficiency of Ultralow Threshold Current Single Quantum Well InGaAs Lasers

A record high current modulation efficiency of 5 GHz/[sqrt](mA) has been demonstrated in an ultralow threshold strained layer single quantum well InGaAs laser

Thermal and Nonthermal Pion Enhancements with Chiral Symmetry Restoration

The pion production by sigma decay and its relation with chiral symmetry restoration in a hot and dense matter are investigated in the framework of the Nambu-Jona-Lasinio model. The decay rate for the process sigma -> 2pion to the lowest order in a 1/N_c expansion is calculated as a function of temperature T and chemical potential mu. The thermal and nonthermal enhancements of pions generated by the decay before and after the freeze-out present only in the crossover region of the chiral symmetry transition. The strongest nonthermal enhancement is located in the vicinity of the endpoint of the first-order transition.Comment: Latex2e, 12 pages, 8 Postscript figures, submitted to Phys. Rev.

Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced

Sigma Decay at Finite Temperature and Density

Sigma decay and its relation with chiral phase transition are discussed at finite temperature and density in the framework of the Nambu-Jona-Lasinio model. The decay rate for the process sigma -> 2 pions to first order in a 1/N_c expansion is calculated as a function of temperature T and baryon density n_b. In particular, only when the chiral phase transition happens around the tricritical point, the sigma decay results in a non-thermal enhancement of pions in the final state distributions in relativistic heavy ion collisions.Comment: 6 pages, 3 Postscript figures, submitted to Chin. Phys. Let

Evolution of Conversations in the Age of Email Overload

Email is a ubiquitous communications tool in the workplace and plays an important role in social interactions. Previous studies of email were largely based on surveys and limited to relatively small populations of email users within organizations. In this paper, we report results of a large-scale study of more than 2 million users exchanging 16 billion emails over several months. We quantitatively characterize the replying behavior in conversations within pairs of users. In particular, we study the time it takes the user to reply to a received message and the length of the reply sent. We consider a variety of factors that affect the reply time and length, such as the stage of the conversation, user demographics, and use of portable devices. In addition, we study how increasing load affects emailing behavior. We find that as users receive more email messages in a day, they reply to a smaller fraction of them, using shorter replies. However, their responsiveness remains intact, and they may even reply to emails faster. Finally, we predict the time to reply, length of reply, and whether the reply ends a conversation. We demonstrate considerable improvement over the baseline in all three prediction tasks, showing the significant role that the factors that we uncover play, in determining replying behavior. We rank these factors based on their predictive power. Our findings have important implications for understanding human behavior and designing better email management applications for tasks like ranking unread emails.Comment: 11 page, 24th International World Wide Web Conferenc

A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration

A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (I_c> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration