Graphene based piezoresistive pressure sensor

We present a pressure sensor based on the piezoresistive effect of graphene. The sensor is a 100?nm thick, 280??m wide square silicon nitride membrane with graphene meander patterns located on the maximum strain area. The multilayer, polycrystalline graphene was obtained by chemical vapor deposition. Strain in graphene was generated by applying differential pressure across the membrane. Finite element simulation was used to analyze the strain distribution. By performing electromechanical measurements, we obtained a gauge factor of ?1.6 for graphene and a dynamic range from 0?mbar to 700?mbar for the pressure sensor.Precision and Microsystems EngineeringMechanical, Maritime and Materials Engineerin

Ballistic transport in graphene grown by chemical vapor deposition

In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ?1??m. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.QN/Quantum NanoscienceApplied Science