86 research outputs found
Single electron capacitance spectroscopy of vertical quantum dots using a single electron transistor
We have incorporated an aluminum single electron transistor (SET) directly on
top of a vertical quantum dot, enabling the use of the SET as an electrometer
that is extremely responsive to the motion of charge into and out of the dot.
Charge induced on the SET central island from single electron additions to the
dot modulates the SET output, and we describe two methods for demodulation that
permit quantitative extraction of the quantum dot capacitance signal. The two
methods produce closely similar results for the determined single electron
capacitance peaks.Comment: Submitted to Applied Physics Letters (reformatted to fit correctly on
a page
A New Class of Resonances at the Edge of the Two Dimensional Electron Gas
We measure the frequency dependent capacitance of a gate covering the edge
and part of a two-dimensional electron gas in the quantum Hall regime. In
applying a positive gate bias, we create a metallic puddle under the gate
surrounded by an insulating region. Charging of the puddle occurs via electron
tunneling from a metallic edge channel. Analysis of the data allows direct
extraction of this tunneling conductance. Novel conductance resonances appear
as a function of gate bias. Samples with gates ranging from 1-170~m along
the edge display strikingly similar resonance spectra. The data suggest the
existence of unexpected structure, homogeneous over long length scales, at the
sample edge.Comment: 13 pages (revtex) including 4 figure
Disorder and interaction induced pairing in the addition spectra of quantum dots
We have investigated numerically the electron addition spectra in quantum
dots containing a small number (N < 11) of interacting electrons, in presence
of strong disorder. For a short-range Coulomb repulsion, we find regimes in
which two successive electrons enter the dot at very close values of the
chemical potential. In the strongly correlated regime these close additions, or
pairing, are associated with electrons tunneling into distinct electron puddles
within the dot. We discuss the tunneling rates at pairing, and we argue that
our results are related to a phenomenon known as "bunching", recently observed
experimentally.Comment: 4 pages, 5 figure
Dynamic nuclear polarization at the edge of a two-dimensional electron gas
We have used gated GaAs/AlGaAs heterostructures to explore nonlinear
transport between spin-resolved Landau level (LL) edge states over a submicron
region of two-dimensional electron gas (2DEG). The current I flowing from one
edge state to the other as a function of the voltage V between them shows
diode-like behavior---a rapid increase in I above a well-defined threshold V_t
under forward bias, and a slower increase in I under reverse bias. In these
measurements, a pronounced influence of a current-induced nuclear spin
polarization on the spin splitting is observed, and supported by a series of
NMR experiments. We conclude that the hyperfine interaction plays an important
role in determining the electronic properties at the edge of a 2DEG.Comment: 8 pages RevTeX, 7 figures (GIF); submitted to Phys. Rev.
Localization in Artificial Disorder - Two Coupled Quantum Dots
Using Single Electron Capacitance Spectroscopy, we study electron additions
in quantum dots containing two potential minima separated by a shallow barrier.
Analysis of addition spectra in magnetic field allows us to distinguish whether
electrons are localized in either potential minimum or delocalized over the
entire dot. We demonstrate that high magnetic field abruptly splits up a
low-density droplet into two smaller fragments, each residing in a potential
minimum. An unexplained cancellation of electron repulsion between electrons in
these fragments gives rise to paired electron additions.Comment: submitted to Phys.Rev.Let
Separately contacted edge states: A new spectroscopic tool for the investigation of the quantum Hall effect
Using an innovative combination of a quasi-Corbino sample geometry and the
cross-gate technique, we have developed a method that enables us to separately
contact single edge channels in the quantum Hall regime and investigate
equilibration among them. Performing 4-point resistance measurements, we
directly obtain information on the energetic and geometric structure of the
edge region and the equilibration-length for current transport across the
Landau- as well as the spin-gap. Based on an almost free choice in the number
of participating edge channels and their interaction-length a systematic
investigation of the parameter-space becomes possible.Comment: 8 pages, 7 figure
Random-phase Approximation Treatment Of Edge Magnetoplasmons: Edge-state Screening And Nonlocality
A random-phase approximation (RPA) treatment of edge magnetoplasmons (EMP) is
presented for strong magnetic fields, low temperatures, and integer filling
factors \nu. It is valid for negligible dissipation and lateral confining
potentials smooth on the scale of the magnetic length \ell_{0} but sufficiently
steep that the Landau-level (LL) flattening can be neglected. LL coupling,
screening by edge states, and nonlocal contributions to the current density are
taken into account. In addition to the fundamental mode with typical dispersion
relation \omega\sim q_x \ln(q_{x}), fundamental modes with {\it acoustic}
dispersion relation \omega\sim q_x are obtained for \nu>2. For \nu=1,2 a {\bf
dipole} mode exists, with dispersion relation \omega\sim q_x^3, that is
directly related to nonlocal responses.Comment: Text 12 pages in Latex/Revtex format, 4 Postscript figure
Repulsion of Single-well Fundamental Edge Magnetoplasmons in Double Quantum Wells
A {\it microscopic} treatment of fundamental edge magnetoplasmons (EMPs)
along the edge of a double quantum well (DQW) is presented for strong magnetic
fields, low temperatures, and total filling factor \nu=2. It is valid for
lateral confining potentials that Landau level (LL) flattening can be
neglected. The cyclotron and Zeeman energies are assumed larger than the DQW
energy splitting \sqrt{\Delta^2 +4T^2}, where \Delta is the splitting of the
isolated wells and T the tunneling matrix element. %hen calculated unperturbed
density profile is sharp at the edge. Using a random-phase approximation (RPA),
which includes local and nonlocal contributions to the current density, it is
shown that for negligible tunnel coupling 2T << \Delta the inter-well Coulomb
coupling leads to two DQW fundamental EMPs which are strongly renormalized in
comparison with the decoupled, single-well fundamental EMP. These DQW modes can
be modified further upon varying the inter-well distance d, along the z axis,
and/or the separation of the wells' edges \Delta y along the y axis. The charge
profile of the {\it fast} and {\it slow} DQW mode varies, respectively, in an
{\it acoustic} and {\it optical} manner along the y axis and is not smooth on
the \ell_{0} scale. For strong tunneling \Delta\alt 2T these DQW modes are
essentially modified when \Delta is changed by applying a transverse electric
field to the DQW.Comment: Text 18 pages in Latex/Revtex/Preprint format, 2 Postscript figure
Quantum and frustration effects on fluctuations of the inverse compressibility in two-dimensional Coulomb glasses
We consider interacting electrons in a two-dimensional quantum Coulomb glass
and investigate by means of the Hartree-Fock approximation the combined effects
of the electron-electron interaction and the transverse magnetic field on
fluctuations of the inverse compressibility. Preceding systematic study of the
system in the absence of the magnetic field identifies the source of the
fluctuations, interplay of disorder and interaction, and effects of hopping.
Revealed in sufficiently clean samples with strong interactions is an unusual
right-biased distribution of the inverse compressibility, which is neither of
the Gaussian nor of the Wigner-Dyson type. While in most cases weak magnetic
fields tend to suppress fluctuations, in relatively clean samples with weak
interactions fluctuations are found to grow with the magnetic field. This is
attributed to the localization properties of the electron states, which may be
measured by the participation ratio and the inverse participation number. It is
also observed that at the frustration where the Fermi level is degenerate,
localization or modulation of electrons is enhanced, raising fluctuations.
Strong frustration in general suppresses effects of the interaction on the
inverse compressibility and on the configuration of electrons.Comment: 15 pages, 18 figures, To appear in Phys. Rev.
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