Theoretical Understanding and Material Design towards Next-generation Data Storage Devices

Ph.DDOCTOR OF PHILOSOPH

Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction

First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric perovskite NaNbO3. Spin-dependent coherent tunneling was calculated within the framework of non-equilibrium Green's function technique. Both spin polarization and tunnel magnetoresistance (TMR) are affected by the interfacial strain but their responses to compressive and tensile strains are different. Spin polarization across the interface is fully preserved under a compressive strain due to stronger coupling between interfacial atoms, whereas a tensile strain significantly enhances interface states and lead to substantial drops in spin polarization and TMR

Interface Controlled Thermal Resistances of Ultra-Thin Chalcogenide-Based Phase Change Memory Devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in interfacial thermal resistance as GST transitions from cubic to hexagonal crystal structure, resulting in a factor of 4 reduction in the effective thermal conductivity. Simulations reveal that interfacial resistance between PCM and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~ 40% and ~ 50%, respectively. These thermal insights present a new opportunity to reduce power and operating currents in PCMs

Transition Metal Atoms Pathways on Rutile TiO2 (110) Surface: Distribution of Ti3+ States and Evidence of Enhanced Peripheral Charge Accumulation

Charge transfer between metal nanoparticles and the supported TiO2 surface is primarily important for catalytic applications as it greatly affects the catalytic activity and the thermal stability of the deposited nanoparticles on the surface. Herein, a systematic spin-polarized density functional calculation is performed to evaluate the adsorption, diffusion, and charge state of several transition metal monomers on both stoichiometric and reduced rutile TiO2 (110) surface. The role of oxygen vacancy (Ov) with its accompanying excess electrons in influencing the activation of the monomers is examined. For pristine reduced surface, our hybrid functional calculation shows that only a small portion (around 5%) of the excess electrons occupy the topmost surface, which are mainly delocalized at the second nearest and third nearest fivefold coordinated Ti (Ti5c) atoms. The small amounts of excess electrons populating at the Ti5c atoms can be transferred to strongly electronegative adsorbates like Au and Pt thus enabling a moderate adsorption, whereas no stable adsorption at the Ti5c site is found for other less electronegative TM adatoms(Ag, Cu, Fe, Co, Ni and Pd) on the reduced surface and for all the adatoms on stoichiometric surface. This finding clarify the origin of the experimental observation of the adsorption of O2 and CO molecules at Ti5c sites in connection with charge transfer. In addition, the spatial redistribution of the excess electrons at Ti5c sites around the Ov upon the adsorption of the monomers is thoroughly examined. Our finding of an accumulation of excess electrons at the Ti5c sites around the monomers explains the critical role of the perimeter interface of the deposited nanoparticles in promoting the adsorption and activation of reactants observed in experiments.Comment: Some more complete results will be presente

A new mutation of the Atoh1 gene in mice with normal life span allows analysis of inner ear and cerebellar phenotype in aging.

Atoh1 is a transcription factor that regulates neural development in multiple tissues and is conserved among species. Prior mouse models of Atoh1, though effective and important in the evolution of our understanding of the gene, have been limited by perinatal lethality. Here we describe a novel point mutation of Atoh1 (designated Atoh1(trhl) ) underlying a phenotype of trembling gait and hearing loss. Histology revealed inner ear hair cell loss and cerebellar atrophy. Auditory Brainstem Response (ABR) and Distortion Product Otoacoustic Emission (DPOAE) showed functional abnormalities in the ear. Normal lifespan and fecundity of Atoh1(trhl) mice provide a complementary model to facilitate elucidation of ATOH1 function in hearing,central nervous system and cancer biology