181 research outputs found

    Two dimensional semiconductors with possible high room temperature mobility

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    We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX2_2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe2_2, HfSe2_2 and HfTe2_2, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cm2^2V1^{-1}s1^{-1} at room temperature

    Inverse spin Hall effect in Nd doped SrTiO3

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    Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin diffusion direction, demonstrated that the detected signals contained the contribution from the inverse spin Hall effect (ISHE) induced by the spin dependent scattering from Nd impurities with strong spin-orbit interaction. The DC voltages of the ISHE for Nd:STO were measured at different microwave frequency and power, which revealed that spin currents were successfully injected into doped STO layer by spin pumping. The linear relation between the ISHE resistivity and the resistivity induced by impurities implied that the skew scattering was the dominant contribution in this case, and the spin Hall angle was estimated to be 0.17%. This work demonstrated that extrinsic spin dependent scattering in oxides can be used in spintroics besides that in heavy elements doped metals
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